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The ratio of interstitial to substitutional site occupation by Mn atoms in GaAs estimated by EXAFS

Lawniczak-Jablonska, K.; Libera, J.; Wolska, A.; Klepka, M. T.; Jakiela, R. and Sadowski, Janusz LU (2009) 9th International School and Symposium on Synchrotron Radiation in Natural Science (ISSRNS-9) In Radiation Physics and Chemistry 78. p.80-85
Abstract
The location of Mn atoms in the MBE-grown layers of Ga1-xMnxAs is correlated with all important physical properties of the final material, therefore, it is the subject of many studies. It is known that in the as-grown MBE samples the Mn atoms occupy substitutional and interstitial positions but the proportion between these sites is not easy to find. A powerful tool for this kind of study is XAS as it probes the local atomic order and the electronic structure. The EXAFS data analysis was performed considering superposition of possible Mn locations. This allowed for determination of the distribution of Mn between those two lattice sites. (C) 2009 Elsevier Ltd. All rights reserved.
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Semiconductors, Interstitial, Spintronics, Local order, X-ray absorption, Gallium arsenide, EXAFS, Manganese
in
Radiation Physics and Chemistry
volume
78
pages
80 - 85
publisher
Elsevier
conference name
9th International School and Symposium on Synchrotron Radiation in Natural Science (ISSRNS-9)
external identifiers
  • wos:000270692000018
  • scopus:69049093723
ISSN
0969-806X
DOI
10.1016/j.radphyschem.2009.03.089
language
English
LU publication?
yes
id
67dcd67c-8222-4586-8dd1-a8e25e9634db (old id 1507212)
date added to LUP
2009-11-20 15:31:19
date last changed
2017-01-01 05:48:36
@inproceedings{67dcd67c-8222-4586-8dd1-a8e25e9634db,
  abstract     = {The location of Mn atoms in the MBE-grown layers of Ga1-xMnxAs is correlated with all important physical properties of the final material, therefore, it is the subject of many studies. It is known that in the as-grown MBE samples the Mn atoms occupy substitutional and interstitial positions but the proportion between these sites is not easy to find. A powerful tool for this kind of study is XAS as it probes the local atomic order and the electronic structure. The EXAFS data analysis was performed considering superposition of possible Mn locations. This allowed for determination of the distribution of Mn between those two lattice sites. (C) 2009 Elsevier Ltd. All rights reserved.},
  author       = {Lawniczak-Jablonska, K. and Libera, J. and Wolska, A. and Klepka, M. T. and Jakiela, R. and Sadowski, Janusz},
  booktitle    = {Radiation Physics and Chemistry},
  issn         = {0969-806X},
  keyword      = {Semiconductors,Interstitial,Spintronics,Local order,X-ray absorption,Gallium arsenide,EXAFS,Manganese},
  language     = {eng},
  pages        = {80--85},
  publisher    = {Elsevier},
  title        = {The ratio of interstitial to substitutional site occupation by Mn atoms in GaAs estimated by EXAFS},
  url          = {http://dx.doi.org/10.1016/j.radphyschem.2009.03.089},
  volume       = {78},
  year         = {2009},
}