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Creation of MnAs nanoclusters during processing of GaMnAs

Bak-Misiuk, J.; Domagala, J. Z.; Romanowski, P.; Dynowska, E.; Lusakowska, E.; Misiuk, A.; Paszkowicz, W.; Sadowski, Janusz LU ; Barcz, A. and Caliebe, W. (2009) 9th International School and Symposium on Synchrotron Radiation in Natural Science (ISSRNS-9) In Radiation Physics And Chemistry 78. p.116-119
Abstract
GaMnAs layers on (0 0 1)-oriented GaAs substrates were grown by the molecular beam epitaxy (MBE) method. Structural properties of samples processed at up to 920 K under hydrostatic Ar pressure up to 1.1 GPa were investigated by X-ray, secondary ion mass spectroscopy and atomic force microscopy methods. The sign of strain (compressive or tensile) of the GaMnAs layers, related to a creation of MnAs nanoclusters, is found to be dependent on processing conditions and on primary structure defects, whereas it was independent of Mn concentration. An influence of the defects structure in as-grown samples on the strain state of processed GaMnAs layers is discussed. (C) 2009 Elsevier Ltd. All rights reserved.
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Nanocluster, Strain, X-ray diffraction, Thin layer, GaMnAs, Annealing, High pressure
in
Radiation Physics And Chemistry
volume
78
pages
116 - 119
publisher
Elsevier
conference name
9th International School and Symposium on Synchrotron Radiation in Natural Science (ISSRNS-9)
external identifiers
  • wos:000270692000027
  • scopus:69049117162
ISSN
0969-806X
DOI
10.1016/j.radphyschem.2009.03.083
language
English
LU publication?
yes
id
45c5346c-8384-4696-be26-8ab9481bc0e9 (old id 1507236)
date added to LUP
2009-11-20 15:11:04
date last changed
2017-01-01 06:25:02
@inproceedings{45c5346c-8384-4696-be26-8ab9481bc0e9,
  abstract     = {GaMnAs layers on (0 0 1)-oriented GaAs substrates were grown by the molecular beam epitaxy (MBE) method. Structural properties of samples processed at up to 920 K under hydrostatic Ar pressure up to 1.1 GPa were investigated by X-ray, secondary ion mass spectroscopy and atomic force microscopy methods. The sign of strain (compressive or tensile) of the GaMnAs layers, related to a creation of MnAs nanoclusters, is found to be dependent on processing conditions and on primary structure defects, whereas it was independent of Mn concentration. An influence of the defects structure in as-grown samples on the strain state of processed GaMnAs layers is discussed. (C) 2009 Elsevier Ltd. All rights reserved.},
  author       = {Bak-Misiuk, J. and Domagala, J. Z. and Romanowski, P. and Dynowska, E. and Lusakowska, E. and Misiuk, A. and Paszkowicz, W. and Sadowski, Janusz and Barcz, A. and Caliebe, W.},
  booktitle    = {Radiation Physics And Chemistry},
  issn         = {0969-806X},
  keyword      = {Nanocluster,Strain,X-ray diffraction,Thin layer,GaMnAs,Annealing,High pressure},
  language     = {eng},
  pages        = {116--119},
  publisher    = {Elsevier},
  title        = {Creation of MnAs nanoclusters during processing of GaMnAs},
  url          = {http://dx.doi.org/10.1016/j.radphyschem.2009.03.083},
  volume       = {78},
  year         = {2009},
}