UHV-MOCVD growth of TiO2 on SiOx/Si(111): Interfacial properties reflected in the Si 2p photoemission spectra
(2005) In Surface Science 580(1-3). p.207-217- Abstract
- Metal-organic chemical vapour deposition growth of titanium oxide on moderately pre-oxidised Si(1 1 1) using the titanium(IV) isopropoxide precursor has been studied for two different growth modes, reaction-limited growth at 300 degrees C and flux-limited growth at 500 degrees C. The interfacial properties have been characterized by monitoring synchrotron radiation excited Si 2p photoemission spectra. The cross-linking from oxidised Si to bulk Si after TTIP exposure has been found to be very similar to that of SiOx/Si(1 1 1). However, the results show that the additional oxidation of Si most probably causes a corrugation of the SiOx/Si interface. Those conclusions are valid for both growth modes. A model is introduced in which the... (More)
- Metal-organic chemical vapour deposition growth of titanium oxide on moderately pre-oxidised Si(1 1 1) using the titanium(IV) isopropoxide precursor has been studied for two different growth modes, reaction-limited growth at 300 degrees C and flux-limited growth at 500 degrees C. The interfacial properties have been characterized by monitoring synchrotron radiation excited Si 2p photoemission spectra. The cross-linking from oxidised Si to bulk Si after TTIP exposure has been found to be very similar to that of SiOx/Si(1 1 1). However, the results show that the additional oxidation of Si most probably causes a corrugation of the SiOx/Si interface. Those conclusions are valid for both growth modes. A model is introduced in which the amorphous interface region is described as (TiO2)(x)(SiO2)(y) where x and y changes linearly and continuously over the interface. The model quantifies how (TiO2)(x)(SiO2)(y) mixing changes the relative intensities of the signals from silicon oxide and silicon. The method can be generalised and used for the analyses of other metal-oxides on silicon. (c) 2005 Elsevier B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/151921
- author
- Karlsson, P G ; Richter, JH ; Andersson, MP ; Blomquist, Jakob LU ; Siegbhan, H ; Uvdal, Per LU and Sandell, A
- organization
- publishing date
- 2005
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Surface Science
- volume
- 580
- issue
- 1-3
- pages
- 207 - 217
- publisher
- Elsevier
- external identifiers
-
- wos:000228544100023
- scopus:15844419330
- ISSN
- 0039-6028
- DOI
- 10.1016/j.susc.2005.02.016
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Chemical Physics (S) (011001060)
- id
- 74cbb8a1-d009-4539-b27e-c33767ced024 (old id 151921)
- date added to LUP
- 2016-04-01 16:41:00
- date last changed
- 2022-04-22 23:45:05
@article{74cbb8a1-d009-4539-b27e-c33767ced024, abstract = {{Metal-organic chemical vapour deposition growth of titanium oxide on moderately pre-oxidised Si(1 1 1) using the titanium(IV) isopropoxide precursor has been studied for two different growth modes, reaction-limited growth at 300 degrees C and flux-limited growth at 500 degrees C. The interfacial properties have been characterized by monitoring synchrotron radiation excited Si 2p photoemission spectra. The cross-linking from oxidised Si to bulk Si after TTIP exposure has been found to be very similar to that of SiOx/Si(1 1 1). However, the results show that the additional oxidation of Si most probably causes a corrugation of the SiOx/Si interface. Those conclusions are valid for both growth modes. A model is introduced in which the amorphous interface region is described as (TiO2)(x)(SiO2)(y) where x and y changes linearly and continuously over the interface. The model quantifies how (TiO2)(x)(SiO2)(y) mixing changes the relative intensities of the signals from silicon oxide and silicon. The method can be generalised and used for the analyses of other metal-oxides on silicon. (c) 2005 Elsevier B.V. All rights reserved.}}, author = {{Karlsson, P G and Richter, JH and Andersson, MP and Blomquist, Jakob and Siegbhan, H and Uvdal, Per and Sandell, A}}, issn = {{0039-6028}}, language = {{eng}}, number = {{1-3}}, pages = {{207--217}}, publisher = {{Elsevier}}, series = {{Surface Science}}, title = {{UHV-MOCVD growth of TiO2 on SiOx/Si(111): Interfacial properties reflected in the Si 2p photoemission spectra}}, url = {{http://dx.doi.org/10.1016/j.susc.2005.02.016}}, doi = {{10.1016/j.susc.2005.02.016}}, volume = {{580}}, year = {{2005}}, }