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UHV-MOCVD growth of TiO2 on SiOx/Si(111): Interfacial properties reflected in the Si 2p photoemission spectra

Karlsson, P G; Richter, JH; Andersson, MP; Blomquist, Jakob LU ; Siegbhan, H; Uvdal, Per LU and Sandell, A (2005) In Surface Science 580(1-3). p.207-217
Abstract
Metal-organic chemical vapour deposition growth of titanium oxide on moderately pre-oxidised Si(1 1 1) using the titanium(IV) isopropoxide precursor has been studied for two different growth modes, reaction-limited growth at 300 degrees C and flux-limited growth at 500 degrees C. The interfacial properties have been characterized by monitoring synchrotron radiation excited Si 2p photoemission spectra. The cross-linking from oxidised Si to bulk Si after TTIP exposure has been found to be very similar to that of SiOx/Si(1 1 1). However, the results show that the additional oxidation of Si most probably causes a corrugation of the SiOx/Si interface. Those conclusions are valid for both growth modes. A model is introduced in which the... (More)
Metal-organic chemical vapour deposition growth of titanium oxide on moderately pre-oxidised Si(1 1 1) using the titanium(IV) isopropoxide precursor has been studied for two different growth modes, reaction-limited growth at 300 degrees C and flux-limited growth at 500 degrees C. The interfacial properties have been characterized by monitoring synchrotron radiation excited Si 2p photoemission spectra. The cross-linking from oxidised Si to bulk Si after TTIP exposure has been found to be very similar to that of SiOx/Si(1 1 1). However, the results show that the additional oxidation of Si most probably causes a corrugation of the SiOx/Si interface. Those conclusions are valid for both growth modes. A model is introduced in which the amorphous interface region is described as (TiO2)(x)(SiO2)(y) where x and y changes linearly and continuously over the interface. The model quantifies how (TiO2)(x)(SiO2)(y) mixing changes the relative intensities of the signals from silicon oxide and silicon. The method can be generalised and used for the analyses of other metal-oxides on silicon. (c) 2005 Elsevier B.V. All rights reserved. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Surface Science
volume
580
issue
1-3
pages
207 - 217
publisher
Elsevier
external identifiers
  • wos:000228544100023
  • scopus:15844419330
ISSN
0039-6028
DOI
10.1016/j.susc.2005.02.016
language
English
LU publication?
yes
id
74cbb8a1-d009-4539-b27e-c33767ced024 (old id 151921)
date added to LUP
2007-07-03 13:53:14
date last changed
2017-01-08 05:10:15
@article{74cbb8a1-d009-4539-b27e-c33767ced024,
  abstract     = {Metal-organic chemical vapour deposition growth of titanium oxide on moderately pre-oxidised Si(1 1 1) using the titanium(IV) isopropoxide precursor has been studied for two different growth modes, reaction-limited growth at 300 degrees C and flux-limited growth at 500 degrees C. The interfacial properties have been characterized by monitoring synchrotron radiation excited Si 2p photoemission spectra. The cross-linking from oxidised Si to bulk Si after TTIP exposure has been found to be very similar to that of SiOx/Si(1 1 1). However, the results show that the additional oxidation of Si most probably causes a corrugation of the SiOx/Si interface. Those conclusions are valid for both growth modes. A model is introduced in which the amorphous interface region is described as (TiO2)(x)(SiO2)(y) where x and y changes linearly and continuously over the interface. The model quantifies how (TiO2)(x)(SiO2)(y) mixing changes the relative intensities of the signals from silicon oxide and silicon. The method can be generalised and used for the analyses of other metal-oxides on silicon. (c) 2005 Elsevier B.V. All rights reserved.},
  author       = {Karlsson, P G and Richter, JH and Andersson, MP and Blomquist, Jakob and Siegbhan, H and Uvdal, Per and Sandell, A},
  issn         = {0039-6028},
  language     = {eng},
  number       = {1-3},
  pages        = {207--217},
  publisher    = {Elsevier},
  series       = {Surface Science},
  title        = {UHV-MOCVD growth of TiO2 on SiOx/Si(111): Interfacial properties reflected in the Si 2p photoemission spectra},
  url          = {http://dx.doi.org/10.1016/j.susc.2005.02.016},
  volume       = {580},
  year         = {2005},
}