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Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures

Spirkoska, D.; Arbiol, J.; Gustafsson, Anders LU ; Conesa-Boj, S.; Glas, F.; Zardo, I.; Heigoldt, M.; Gass, M. H.; Bleloch, A. L. and Estrade, S., et al. (2009) In Physical Review B (Condensed Matter and Materials Physics) 80(24).
Abstract
The structural and optical properties of three different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases are observed by transmission electron microscopy in the nanowires. Sharp photoluminescence lines are observed with emission energies tuned from 1.515 eV down to 1.43 eV when the percentage of wurtzite is increased. The downward shift of the emission peaks can be understood by carrier confinement at the interfaces, in quantum wells and in random short period superlattices existent in these nanowires, assuming a staggered band offset between wurtzite and zinc-blende GaAs. The latter is... (More)
The structural and optical properties of three different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases are observed by transmission electron microscopy in the nanowires. Sharp photoluminescence lines are observed with emission energies tuned from 1.515 eV down to 1.43 eV when the percentage of wurtzite is increased. The downward shift of the emission peaks can be understood by carrier confinement at the interfaces, in quantum wells and in random short period superlattices existent in these nanowires, assuming a staggered band offset between wurtzite and zinc-blende GaAs. The latter is confirmed also by time-resolved measurements. The extremely local nature of these optical transitions is evidenced also by cathodoluminescence measurements. Raman spectroscopy on single wires shows different strain conditions, depending on the wurtzite content which affects also the band alignments. Finally, the occurrence of the two crystallographic phases is discussed in thermodynamic terms. (Less)
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keywords
semiconductor quantum wires, semiconductor quantum wells, semiconductor heterojunctions, Raman spectra, photoluminescence, nanowires, III-V semiconductors, cathodoluminescence, gallium arsenide, thermodynamics, time resolved spectra, transmission electron microscopy
in
Physical Review B (Condensed Matter and Materials Physics)
volume
80
issue
24
publisher
American Physical Society
external identifiers
  • wos:000273229200104
  • scopus:77954701758
ISSN
1098-0121
DOI
10.1103/PhysRevB.80.245325
language
English
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yes
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52c83e57-2bf6-4998-8433-a0bac24cd4da (old id 1531527)
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2010-01-28 12:40:17
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2017-11-19 03:51:51
@article{52c83e57-2bf6-4998-8433-a0bac24cd4da,
  abstract     = {The structural and optical properties of three different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases are observed by transmission electron microscopy in the nanowires. Sharp photoluminescence lines are observed with emission energies tuned from 1.515 eV down to 1.43 eV when the percentage of wurtzite is increased. The downward shift of the emission peaks can be understood by carrier confinement at the interfaces, in quantum wells and in random short period superlattices existent in these nanowires, assuming a staggered band offset between wurtzite and zinc-blende GaAs. The latter is confirmed also by time-resolved measurements. The extremely local nature of these optical transitions is evidenced also by cathodoluminescence measurements. Raman spectroscopy on single wires shows different strain conditions, depending on the wurtzite content which affects also the band alignments. Finally, the occurrence of the two crystallographic phases is discussed in thermodynamic terms.},
  articleno    = {245325},
  author       = {Spirkoska, D. and Arbiol, J. and Gustafsson, Anders and Conesa-Boj, S. and Glas, F. and Zardo, I. and Heigoldt, M. and Gass, M. H. and Bleloch, A. L. and Estrade, S. and Kaniber, M. and Rossler, J. and Peiro, F. and Morante, J. R. and Abstreiter, G. and Samuelson, Lars and Fontcuberta i Morral, A.},
  issn         = {1098-0121},
  keyword      = {semiconductor quantum wires,semiconductor quantum wells,semiconductor heterojunctions,Raman spectra,photoluminescence,nanowires,III-V semiconductors,cathodoluminescence,gallium arsenide,thermodynamics,time resolved spectra,transmission electron microscopy},
  language     = {eng},
  number       = {24},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures},
  url          = {http://dx.doi.org/10.1103/PhysRevB.80.245325},
  volume       = {80},
  year         = {2009},
}