Bistability of (Ga,Mn)As Ferromagnetic Nanostructures Due to the Domain Walls Switching
(2009) 4th Workshop on Quantum Chaos and Localisation Phenomena 116(5). p.901-903- Abstract
- We designed and investigated four-arm nanostructures, composed of two perpendicularly crossed stripes, fabricated from ferromagnetic (Ga,Mn)As layer by means of electron-beam lithography patterning and chemical etching. The nanostructures exhibit a bistable resistance behavior resulting from two configurations of magnetic domain walls in the central part of the structures. We demonstrate a possibility of switching between two stable resistance states in zero magnetic field by applying a pulse of either weak magnetic field or electric current through the structure.
    Please use this url to cite or link to this publication:
    https://lup.lub.lu.se/record/1532185
- author
- Andrearczyk, T. ; Wosinski, T. ; Makosa, A. ; Figielski, T. ; Wrobel, J. and Sadowski, Janusz LU
- organization
- publishing date
- 2009
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- Acta Physica Polonica A
- volume
- 116
- issue
- 5
- pages
- 901 - 903
- publisher
- Polish Academy of Sciences
- conference name
- 4th Workshop on Quantum Chaos and Localisation Phenomena
- conference location
- Warsaw, Poland
- conference dates
- 2009-05-22 - 2009-05-24
- external identifiers
- 
                - wos:000273091200042
- scopus:73049090146
 
- ISSN
- 0587-4246
- language
- English
- LU publication?
- yes
- id
- 15b7bdd3-f8a5-46b2-80ac-e647fb8de890 (old id 1532185)
- date added to LUP
- 2016-04-01 14:07:08
- date last changed
- 2025-10-14 09:44:05
@inproceedings{15b7bdd3-f8a5-46b2-80ac-e647fb8de890,
  abstract     = {{We designed and investigated four-arm nanostructures, composed of two perpendicularly crossed stripes, fabricated from ferromagnetic (Ga,Mn)As layer by means of electron-beam lithography patterning and chemical etching. The nanostructures exhibit a bistable resistance behavior resulting from two configurations of magnetic domain walls in the central part of the structures. We demonstrate a possibility of switching between two stable resistance states in zero magnetic field by applying a pulse of either weak magnetic field or electric current through the structure.}},
  author       = {{Andrearczyk, T. and Wosinski, T. and Makosa, A. and Figielski, T. and Wrobel, J. and Sadowski, Janusz}},
  booktitle    = {{Acta Physica Polonica A}},
  issn         = {{0587-4246}},
  language     = {{eng}},
  number       = {{5}},
  pages        = {{901--903}},
  publisher    = {{Polish Academy of Sciences}},
  title        = {{Bistability of (Ga,Mn)As Ferromagnetic Nanostructures Due to the Domain Walls Switching}},
  volume       = {{116}},
  year         = {{2009}},
}