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g-factor and exchange energy in a few-electron lateral InGaAs quantum dot

Larsson, Marcus LU ; Nilsson, Henrik LU ; Hardtdegen, H. and Xu, Hongqi LU (2009) In Applied Physics Letters 95(19).
Abstract
We report on the measurements of the g-factor and the exchange Interaction of electrons in a few-electron lateral quantum dot formed in an InGaAs/InP semiconductor heterostructure. The spin filling sequence of the electron states in the dot is determined by magnetotransport measurements and parallel spin filling configurations are Identified The measured g-factor (for a magnetic field applied parallel to the InGaAs quantum layer) has it Value in the range of vertical bar g*vertical bar approximate to 2 to vertical bar g*vertical bar approximate to 4 and is strongly level-dependent. By analysis of the energies of the states which favor a parallel spin filling. the lower bound of the exchange energy of electrons in the clot in the order of... (More)
We report on the measurements of the g-factor and the exchange Interaction of electrons in a few-electron lateral quantum dot formed in an InGaAs/InP semiconductor heterostructure. The spin filling sequence of the electron states in the dot is determined by magnetotransport measurements and parallel spin filling configurations are Identified The measured g-factor (for a magnetic field applied parallel to the InGaAs quantum layer) has it Value in the range of vertical bar g*vertical bar approximate to 2 to vertical bar g*vertical bar approximate to 4 and is strongly level-dependent. By analysis of the energies of the states which favor a parallel spin filling. the lower bound of the exchange energy of electrons in the clot in the order of similar to 210 mu eV is extracted. (C) 2009 American Institute of Physics. (Less)
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
95
issue
19
article number
192112
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000272756600043
  • scopus:70449701895
ISSN
0003-6951
DOI
10.1063/1.3264053
language
English
LU publication?
yes
id
6c8a8040-5a40-4c69-a85d-ec43743c2ddb (old id 1532633)
date added to LUP
2016-04-01 12:20:47
date last changed
2025-04-04 14:32:35
@article{6c8a8040-5a40-4c69-a85d-ec43743c2ddb,
  abstract     = {{We report on the measurements of the g-factor and the exchange Interaction of electrons in a few-electron lateral quantum dot formed in an InGaAs/InP semiconductor heterostructure. The spin filling sequence of the electron states in the dot is determined by magnetotransport measurements and parallel spin filling configurations are Identified The measured g-factor (for a magnetic field applied parallel to the InGaAs quantum layer) has it Value in the range of vertical bar g*vertical bar approximate to 2 to vertical bar g*vertical bar approximate to 4 and is strongly level-dependent. By analysis of the energies of the states which favor a parallel spin filling. the lower bound of the exchange energy of electrons in the clot in the order of similar to 210 mu eV is extracted. (C) 2009 American Institute of Physics.}},
  author       = {{Larsson, Marcus and Nilsson, Henrik and Hardtdegen, H. and Xu, Hongqi}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{19}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{g-factor and exchange energy in a few-electron lateral InGaAs quantum dot}},
  url          = {{http://dx.doi.org/10.1063/1.3264053}},
  doi          = {{10.1063/1.3264053}},
  volume       = {{95}},
  year         = {{2009}},
}