Advanced

Memory Behavior of the Planar Hall Effect in Ferromagnetic (Ga, Mn)As/GaAs Superlattices

Wosinski, T.; Wesela, W.; Makosa, A.; Figielski, T. and Sadowski, Janusz LU (2010) 5th International Conference on Physics and Applications of Spin-Related Phenomena in Semiconductors In Journal of Superconductivity and Novel Magnetism 23(1). p.83-86
Abstract
The planar Hall effect (PHE) has been studied in short period (Ga, Mn)As/GaAs superlattices displaying a ferromagnetic interlayer coupling between the magnetic layers. Complex dependence of the PHE on applied magnetic field is explained by taking into account the magnetocrystalline anisotropy of the (Ga, Mn)As layers, which results from biaxial compressive strain in the layers epitaxially grown on GaAs. Two-state behavior of the planar Hall resistance at zero magnetic field provides its usefulness for applications in nonvolatile memory devices. In addition, using an appropriate sequence of applied magnetic fields four different states of the planar Hall resistance, suitable for quaternary memory devices, can be realized owing to the... (More)
The planar Hall effect (PHE) has been studied in short period (Ga, Mn)As/GaAs superlattices displaying a ferromagnetic interlayer coupling between the magnetic layers. Complex dependence of the PHE on applied magnetic field is explained by taking into account the magnetocrystalline anisotropy of the (Ga, Mn)As layers, which results from biaxial compressive strain in the layers epitaxially grown on GaAs. Two-state behavior of the planar Hall resistance at zero magnetic field provides its usefulness for applications in nonvolatile memory devices. In addition, using an appropriate sequence of applied magnetic fields four different states of the planar Hall resistance, suitable for quaternary memory devices, can be realized owing to the formation of a stable multidomain structure in the Hall bar. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Planar Hall effect, Ferromagnetic semiconductors, Superlattices, devices, Memory
in
Journal of Superconductivity and Novel Magnetism
volume
23
issue
1
pages
83 - 86
publisher
Springer
conference name
5th International Conference on Physics and Applications of Spin-Related Phenomena in Semiconductors
external identifiers
  • wos:000272905100021
  • scopus:73349090562
ISSN
1557-1939
1557-1947
DOI
10.1007/s10948-009-0567-5
language
English
LU publication?
yes
id
48a780dc-2f4c-4534-9dd3-69bd95031b6d (old id 1533842)
date added to LUP
2010-01-27 12:20:23
date last changed
2018-05-29 09:53:23
@inproceedings{48a780dc-2f4c-4534-9dd3-69bd95031b6d,
  abstract     = {The planar Hall effect (PHE) has been studied in short period (Ga, Mn)As/GaAs superlattices displaying a ferromagnetic interlayer coupling between the magnetic layers. Complex dependence of the PHE on applied magnetic field is explained by taking into account the magnetocrystalline anisotropy of the (Ga, Mn)As layers, which results from biaxial compressive strain in the layers epitaxially grown on GaAs. Two-state behavior of the planar Hall resistance at zero magnetic field provides its usefulness for applications in nonvolatile memory devices. In addition, using an appropriate sequence of applied magnetic fields four different states of the planar Hall resistance, suitable for quaternary memory devices, can be realized owing to the formation of a stable multidomain structure in the Hall bar.},
  author       = {Wosinski, T. and Wesela, W. and Makosa, A. and Figielski, T. and Sadowski, Janusz},
  booktitle    = {Journal of Superconductivity and Novel Magnetism},
  issn         = {1557-1939},
  keyword      = {Planar Hall effect,Ferromagnetic semiconductors,Superlattices,devices,Memory},
  language     = {eng},
  number       = {1},
  pages        = {83--86},
  publisher    = {Springer},
  title        = {Memory Behavior of the Planar Hall Effect in Ferromagnetic (Ga, Mn)As/GaAs Superlattices},
  url          = {http://dx.doi.org/10.1007/s10948-009-0567-5},
  volume       = {23},
  year         = {2010},
}