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Bismuth-stabilized c(2X6) reconstruction on a InSb(100) substrate: Violation of the electron counting model

Laukkanen, P.; Punkkinen, M. P. J.; Rasanen, N.; Ahola-Tuomi, M.; Kuzmin, M.; Lang, J.; Sadowski, Janusz LU ; Adell, Johan LU ; Perala, R. E. and Ropo, M., et al. (2010) In Physical Review B (Condensed Matter and Materials Physics) 81(3).
Abstract
By means of scanning tunneling microscopy/spectroscopy (STM/STS), photoelectron spectroscopy, and first-principles calculations, we have studied the bismuth (Bi) adsorbate-stabilized InSb(100) substrate surface which shows a c(2X6) low-energy electron diffraction pattern [thus labeled Bi/InSb(100)c(2X6) surface] and which includes areas with metallic STS curves as well as areas with semiconducting STS curves. The first-principles phase diagram of the Bi/InSb(100) surface demonstrates the presence of the Bi-stabilized metallic c(2X6) reconstruction and semiconducting (4X3) reconstruction depending on the chemical potentials, in good agreement with STS results. The existence of the metallic c(2X6) phase, which does not obey the electron... (More)
By means of scanning tunneling microscopy/spectroscopy (STM/STS), photoelectron spectroscopy, and first-principles calculations, we have studied the bismuth (Bi) adsorbate-stabilized InSb(100) substrate surface which shows a c(2X6) low-energy electron diffraction pattern [thus labeled Bi/InSb(100)c(2X6) surface] and which includes areas with metallic STS curves as well as areas with semiconducting STS curves. The first-principles phase diagram of the Bi/InSb(100) surface demonstrates the presence of the Bi-stabilized metallic c(2X6) reconstruction and semiconducting (4X3) reconstruction depending on the chemical potentials, in good agreement with STS results. The existence of the metallic c(2X6) phase, which does not obey the electron counting model, is attributed to the partial prohibition of the relaxation in the direction perpendicular to dimer rows in the competing reconstructions and the peculiar stability of the Bi-stabilized dimer rows. Based on (i) first-principles phase diagram, (ii) STS results, and (iii) comparison of the measured and calculated STM and photoemission data, we show that the measured Bi/InSb(100)c(2X6) surface includes metallic areas with the stable c(2X6) atomic structure and semiconducting areas with the stable (4X3) atomic structure. (Less)
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publication status
published
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Physical Review B (Condensed Matter and Materials Physics)
volume
81
issue
3
publisher
American Physical Society
external identifiers
  • wos:000274002300066
  • scopus:77954822597
ISSN
1098-0121
DOI
10.1103/PhysRevB.81.035310
language
English
LU publication?
yes
id
77ad9ca2-1cd6-46cb-9364-9bbe5e4b40eb (old id 1546873)
date added to LUP
2010-02-25 11:55:06
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2018-07-01 03:46:54
@article{77ad9ca2-1cd6-46cb-9364-9bbe5e4b40eb,
  abstract     = {By means of scanning tunneling microscopy/spectroscopy (STM/STS), photoelectron spectroscopy, and first-principles calculations, we have studied the bismuth (Bi) adsorbate-stabilized InSb(100) substrate surface which shows a c(2X6) low-energy electron diffraction pattern [thus labeled Bi/InSb(100)c(2X6) surface] and which includes areas with metallic STS curves as well as areas with semiconducting STS curves. The first-principles phase diagram of the Bi/InSb(100) surface demonstrates the presence of the Bi-stabilized metallic c(2X6) reconstruction and semiconducting (4X3) reconstruction depending on the chemical potentials, in good agreement with STS results. The existence of the metallic c(2X6) phase, which does not obey the electron counting model, is attributed to the partial prohibition of the relaxation in the direction perpendicular to dimer rows in the competing reconstructions and the peculiar stability of the Bi-stabilized dimer rows. Based on (i) first-principles phase diagram, (ii) STS results, and (iii) comparison of the measured and calculated STM and photoemission data, we show that the measured Bi/InSb(100)c(2X6) surface includes metallic areas with the stable c(2X6) atomic structure and semiconducting areas with the stable (4X3) atomic structure.},
  author       = {Laukkanen, P. and Punkkinen, M. P. J. and Rasanen, N. and Ahola-Tuomi, M. and Kuzmin, M. and Lang, J. and Sadowski, Janusz and Adell, Johan and Perala, R. E. and Ropo, M. and Kokko, K. and Vitos, L. and Johansson, B. and Pessa, M. and Vayrynen, I. J.},
  issn         = {1098-0121},
  language     = {eng},
  number       = {3},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Bismuth-stabilized c(2X6) reconstruction on a InSb(100) substrate: Violation of the electron counting model},
  url          = {http://dx.doi.org/10.1103/PhysRevB.81.035310},
  volume       = {81},
  year         = {2010},
}