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Defect Free PbTe Nanowires Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates

Dziawa, P.; Sadowski, Janusz LU ; Dluzewski, P.; Lusakowska, E.; Domukhovski, V.; Taliashvili, B.; Wojciechowski, T.; Baczewski, L. T.; Bukala, M. and Galicka, M., et al. (2010) In Crystal Growth & Design 10(1). p.109-113
Abstract
The molecular beam epitaxial growth of PbTe nanowires oil GaAs(111)B substrates is reported. The growth process was based oil the Au-catalyzed vapor-liquid-solid mechanism. These nanowires grow along the [100] axis; they are perpendicular to the substrate, have tapered shapes, and have diameters of about 90 rim at the base and 60 run at the top. High resolution transmission electron microscopy pictures reveal that the PbTe nanowires have a rock-salt structure and, in contrast to the one-dimensional structures of III-V and II-VI compound semiconductors such as GaAs. InAs, or ZnTe, are free from stacking faults. A theoretical analysis of these experimental findings, which is based oil ab initio modeling of the PbTe nanowires, is also... (More)
The molecular beam epitaxial growth of PbTe nanowires oil GaAs(111)B substrates is reported. The growth process was based oil the Au-catalyzed vapor-liquid-solid mechanism. These nanowires grow along the [100] axis; they are perpendicular to the substrate, have tapered shapes, and have diameters of about 90 rim at the base and 60 run at the top. High resolution transmission electron microscopy pictures reveal that the PbTe nanowires have a rock-salt structure and, in contrast to the one-dimensional structures of III-V and II-VI compound semiconductors such as GaAs. InAs, or ZnTe, are free from stacking faults. A theoretical analysis of these experimental findings, which is based oil ab initio modeling of the PbTe nanowires, is also presented. (Less)
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type
Contribution to journal
publication status
published
subject
in
Crystal Growth & Design
volume
10
issue
1
pages
109 - 113
publisher
The American Chemical Society
external identifiers
  • wos:000274757100020
  • scopus:74049162065
ISSN
1528-7483
DOI
10.1021/cg900575r
language
English
LU publication?
yes
id
ce706ae5-9896-440c-be1a-4c1a61246b59 (old id 1547889)
date added to LUP
2010-02-23 08:10:36
date last changed
2018-05-29 11:47:20
@article{ce706ae5-9896-440c-be1a-4c1a61246b59,
  abstract     = {The molecular beam epitaxial growth of PbTe nanowires oil GaAs(111)B substrates is reported. The growth process was based oil the Au-catalyzed vapor-liquid-solid mechanism. These nanowires grow along the [100] axis; they are perpendicular to the substrate, have tapered shapes, and have diameters of about 90 rim at the base and 60 run at the top. High resolution transmission electron microscopy pictures reveal that the PbTe nanowires have a rock-salt structure and, in contrast to the one-dimensional structures of III-V and II-VI compound semiconductors such as GaAs. InAs, or ZnTe, are free from stacking faults. A theoretical analysis of these experimental findings, which is based oil ab initio modeling of the PbTe nanowires, is also presented.},
  author       = {Dziawa, P. and Sadowski, Janusz and Dluzewski, P. and Lusakowska, E. and Domukhovski, V. and Taliashvili, B. and Wojciechowski, T. and Baczewski, L. T. and Bukala, M. and Galicka, M. and Buczko, R. and Kacman, P. and Story, T.},
  issn         = {1528-7483},
  language     = {eng},
  number       = {1},
  pages        = {109--113},
  publisher    = {The American Chemical Society},
  series       = {Crystal Growth & Design},
  title        = {Defect Free PbTe Nanowires Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates},
  url          = {http://dx.doi.org/10.1021/cg900575r},
  volume       = {10},
  year         = {2010},
}