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Buffer layer free large area bi-layer graphene on SiC(0001)

Virojanadara, C.; Zakharov, Alexei LU ; Yakimova, R. and Johansson, L. I. (2010) In Surface Science 604(2). p.4-7
Abstract
The influence of hydrogen exposures on monolayer graphene grown on the silicon terminated SiC(0 0 0 1) surface is investigated using photoelectron spectroscopy (PES), low-energy electron microscopy (LEEM) and micro low-energy electron diffraction (mu-LEED). Exposures to ionized hydrogen are shown to have a pronounced effect on the carbon buffer (interface) layer. Exposures to atomic hydrogen are shown to actually convert/transform the monolayer graphene plus carbon buffer layer to bi-layer graphene, i.e. to produce carbon buffer layer free bi-layer graphene on SiC(0 0 0 1). This process is shown to be reversible, so the initial monolayer graphene plus carbon buffer layer situation is recreated after heating to a temperature of about 950... (More)
The influence of hydrogen exposures on monolayer graphene grown on the silicon terminated SiC(0 0 0 1) surface is investigated using photoelectron spectroscopy (PES), low-energy electron microscopy (LEEM) and micro low-energy electron diffraction (mu-LEED). Exposures to ionized hydrogen are shown to have a pronounced effect on the carbon buffer (interface) layer. Exposures to atomic hydrogen are shown to actually convert/transform the monolayer graphene plus carbon buffer layer to bi-layer graphene, i.e. to produce carbon buffer layer free bi-layer graphene on SiC(0 0 0 1). This process is shown to be reversible, so the initial monolayer graphene plus carbon buffer layer situation is recreated after heating to a temperature of about 950 degrees C. A tentative model of hydrogen intercalation is suggested to explain this single to bi-layer graphene transformation mechanism. Our findings are of relevance and importance for various potential applications based on graphene-SiC structures and hydrogen storage. (C) 2009 Elsevier B.V. All rights reserved. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
LEEM, Silicon carbide, Epitaxial, Graphene, Bi-layer, PES, Hydrogenation, LEED
in
Surface Science
volume
604
issue
2
pages
4 - 7
publisher
Elsevier
external identifiers
  • wos:000274591000002
  • scopus:72649089151
ISSN
0039-6028
DOI
10.1016/j.susc.2009.11.011
language
English
LU publication?
yes
id
0dfe453b-d930-4644-b9de-7e34df9ea5b7 (old id 1568446)
date added to LUP
2010-03-23 12:51:39
date last changed
2018-06-03 04:02:03
@article{0dfe453b-d930-4644-b9de-7e34df9ea5b7,
  abstract     = {The influence of hydrogen exposures on monolayer graphene grown on the silicon terminated SiC(0 0 0 1) surface is investigated using photoelectron spectroscopy (PES), low-energy electron microscopy (LEEM) and micro low-energy electron diffraction (mu-LEED). Exposures to ionized hydrogen are shown to have a pronounced effect on the carbon buffer (interface) layer. Exposures to atomic hydrogen are shown to actually convert/transform the monolayer graphene plus carbon buffer layer to bi-layer graphene, i.e. to produce carbon buffer layer free bi-layer graphene on SiC(0 0 0 1). This process is shown to be reversible, so the initial monolayer graphene plus carbon buffer layer situation is recreated after heating to a temperature of about 950 degrees C. A tentative model of hydrogen intercalation is suggested to explain this single to bi-layer graphene transformation mechanism. Our findings are of relevance and importance for various potential applications based on graphene-SiC structures and hydrogen storage. (C) 2009 Elsevier B.V. All rights reserved.},
  author       = {Virojanadara, C. and Zakharov, Alexei and Yakimova, R. and Johansson, L. I.},
  issn         = {0039-6028},
  keyword      = {LEEM,Silicon carbide,Epitaxial,Graphene,Bi-layer,PES,Hydrogenation,LEED},
  language     = {eng},
  number       = {2},
  pages        = {4--7},
  publisher    = {Elsevier},
  series       = {Surface Science},
  title        = {Buffer layer free large area bi-layer graphene on SiC(0001)},
  url          = {http://dx.doi.org/10.1016/j.susc.2009.11.011},
  volume       = {604},
  year         = {2010},
}