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2024
Mark High crystalline quality homoepitaxial Si-doped β-Ga₂O₃(010) layers with reduced structural anisotropy grown by hot-wall MOCVD
Gogova, D. ; Tran, D. Q. ; Stanishev, V. ; Jokubavicius, V. ; Vines, L. ; Schubert, M. ^LU ; Yakimova, R. ; Paskov, P. P. and Darakchieva, V. ^LU (2024) In Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 42(2).
- Contribution to journal › Article
2023
Mark Bottom-Up Growth of Monolayer Honeycomb SiC
Polley, C. M. ^LU ; Fedderwitz, H. ^LU ; Balasubramanian, T. ^LU ; Zakharov, A. A. ^LU ; Yakimova, R. ; Bäcke, O. ; Ekman, J. ; Dash, S. P. ; Kubatkin, S. and Lara-Avila, S. (2023) In Physical Review Letters 130(7).
- Contribution to journal › Article
2019
Mark Origin of the π -band replicas in the electronic structure of graphene grown on 4H -SiC(0001)
Polley, C. M. ^LU ; Johansson, L. I. ; Fedderwitz, H. ^LU ; Balasubramanian, T. ^LU ; Leandersson, M. ^LU ; Adell, J. ^LU ; Yakimova, R. and Jacobi, C. (2019) In Physical Review B 99(11).
- Contribution to journal › Article
2017
Mark Metal-dielectric transition in Sn-intercalated graphene on SiC(0001)
Niu, Y. R. ^LU ; Zakharov, A. A. ^LU and Yakimova, R (2017) In Ultramicroscopy 183. p.49-54
- Contribution to journal › Article
Mark Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC
Bouhafs, C. ; Zakharov, A. A. ^LU ; Ivanov, Ivan G. ; Giannazzo, F. ; Eriksson, J. ; Stanishev, V. ; Kühne, P. ; Iakimov, T. ; Hofmann, T. and Schubert, M. , et al. (2017) In Carbon 116. p.722-732
- Contribution to journal › Article
2016
Mark Ion beam evaluation of silicon carbide membrane structures intended for particle detectors
Pallon, J. ^LU ; Syväjärvi, M. ; Wang, Q. ; Yakimova, R. ; Iakimov, T. ; Elfman, M. ^LU ; Kristiansson, P. ^LU ; Nilsson, Charlotta ^LU and Ros, L. ^LU (2016) In Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms 371. p.132-136
- Contribution to journal › Article
Mark Decoupling and ordering of multilayer graphene on C-face 3C-SiC(111)
Bouhafs, C. ; Stanishev, V. ; Zakharov, A. A. ^LU ; Hofmann, T. ; Kühne, P. ; Iakimov, T. ; Yakimova, R. ; Schubert, M. and Darakchieva, V. (2016) In Applied Physics Letters 109(20).
- Contribution to journal › Article
2014
Mark Morphological and electronic properties of epitaxial graphene on SiC
Yakimova, R. ; Iakimov, T. ; Yazdi, G. R. ; Bouhafs, C. ; Eriksson, J. ; Zakharov, Alexei ^LU ; Boosalis, A. ; Schubert, M. and Darakchieva, V. (2014) In Physica B: Condensed Matter 439. p.54-59
- Contribution to journal › Article
2013
Mark Detailed studies of Na intercalation on furnace-grown graphene on 6H-SiC(0001)
Xia, C. ; Watcharinyanon, S. ; Zakharov, Alexei ^LU ; Johansson, L. I. ; Yakimova, R. and Virojanadara, C. (2013) In Surface Science 613. p.88-94
- Contribution to journal › Article
Mark Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111)
Darakchieva, V. ; Boosalis, A. ; Zakharov, Alexei ^LU ; Hofmann, T. ; Schubert, M. ; Tiwald, T. E. ; Iakimov, T. ; Vasiliauskas, R. and Yakimova, R. (2013) In Applied Physics Letters 102(21).
- Contribution to journal › Article

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