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Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111)

Darakchieva, V.; Boosalis, A.; Zakharov, Alexei LU ; Hofmann, T.; Schubert, M.; Tiwald, T. E.; Iakimov, T.; Vasiliauskas, R. and Yakimova, R. (2013) In Applied Physics Letters 102(21).
Abstract
Microfocal spectroscopic ellipsometry mapping of the electronic properties and thickness of epitaxial graphene grown by high-temperature sublimation on 3C-SiC (111) substrates is reported. Growth of one monolayer graphene is demonstrated on both Si- and C-polarity of the 3C-SiC substrates and it is shown that large area homogeneous single monolayer graphene can be achieved on the Si-face substrates. Correlations between the number of graphene monolayers on one hand and the main transition associated with an exciton enhanced van Hove singularity at similar to 4.5 eV and the free-charge carrier scattering time, on the other are established. It is shown that the interface structure on the Si-and C-polarity of the 3C-SiC(111) differs and has a... (More)
Microfocal spectroscopic ellipsometry mapping of the electronic properties and thickness of epitaxial graphene grown by high-temperature sublimation on 3C-SiC (111) substrates is reported. Growth of one monolayer graphene is demonstrated on both Si- and C-polarity of the 3C-SiC substrates and it is shown that large area homogeneous single monolayer graphene can be achieved on the Si-face substrates. Correlations between the number of graphene monolayers on one hand and the main transition associated with an exciton enhanced van Hove singularity at similar to 4.5 eV and the free-charge carrier scattering time, on the other are established. It is shown that the interface structure on the Si-and C-polarity of the 3C-SiC(111) differs and has a determining role for the thickness and electronic properties homogeneity of the epitaxial graphene. (C) 2013 AIP Publishing LLC. (Less)
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author
organization
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type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
102
issue
21
publisher
AIP Publishing LLC
external identifiers
  • wos:000320620400073
  • scopus:84879068916
ISSN
0003-6951
DOI
10.1063/1.4808379
language
English
LU publication?
yes
id
3e9c0536-41e8-42a8-be33-48a57266081c (old id 3979906)
date added to LUP
2013-09-06 08:58:14
date last changed
2019-02-20 03:06:22
@article{3e9c0536-41e8-42a8-be33-48a57266081c,
  abstract     = {Microfocal spectroscopic ellipsometry mapping of the electronic properties and thickness of epitaxial graphene grown by high-temperature sublimation on 3C-SiC (111) substrates is reported. Growth of one monolayer graphene is demonstrated on both Si- and C-polarity of the 3C-SiC substrates and it is shown that large area homogeneous single monolayer graphene can be achieved on the Si-face substrates. Correlations between the number of graphene monolayers on one hand and the main transition associated with an exciton enhanced van Hove singularity at similar to 4.5 eV and the free-charge carrier scattering time, on the other are established. It is shown that the interface structure on the Si-and C-polarity of the 3C-SiC(111) differs and has a determining role for the thickness and electronic properties homogeneity of the epitaxial graphene. (C) 2013 AIP Publishing LLC.},
  articleno    = {213116},
  author       = {Darakchieva, V. and Boosalis, A. and Zakharov, Alexei and Hofmann, T. and Schubert, M. and Tiwald, T. E. and Iakimov, T. and Vasiliauskas, R. and Yakimova, R.},
  issn         = {0003-6951},
  language     = {eng},
  number       = {21},
  publisher    = {AIP Publishing LLC},
  series       = {Applied Physics Letters},
  title        = {Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111)},
  url          = {http://dx.doi.org/10.1063/1.4808379},
  volume       = {102},
  year         = {2013},
}