Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111)
(2013) In Applied Physics Letters 102(21).- Abstract
- Microfocal spectroscopic ellipsometry mapping of the electronic properties and thickness of epitaxial graphene grown by high-temperature sublimation on 3C-SiC (111) substrates is reported. Growth of one monolayer graphene is demonstrated on both Si- and C-polarity of the 3C-SiC substrates and it is shown that large area homogeneous single monolayer graphene can be achieved on the Si-face substrates. Correlations between the number of graphene monolayers on one hand and the main transition associated with an exciton enhanced van Hove singularity at similar to 4.5 eV and the free-charge carrier scattering time, on the other are established. It is shown that the interface structure on the Si-and C-polarity of the 3C-SiC(111) differs and has a... (More)
- Microfocal spectroscopic ellipsometry mapping of the electronic properties and thickness of epitaxial graphene grown by high-temperature sublimation on 3C-SiC (111) substrates is reported. Growth of one monolayer graphene is demonstrated on both Si- and C-polarity of the 3C-SiC substrates and it is shown that large area homogeneous single monolayer graphene can be achieved on the Si-face substrates. Correlations between the number of graphene monolayers on one hand and the main transition associated with an exciton enhanced van Hove singularity at similar to 4.5 eV and the free-charge carrier scattering time, on the other are established. It is shown that the interface structure on the Si-and C-polarity of the 3C-SiC(111) differs and has a determining role for the thickness and electronic properties homogeneity of the epitaxial graphene. (C) 2013 AIP Publishing LLC. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3979906
- author
- Darakchieva, V. ; Boosalis, A. ; Zakharov, Alexei LU ; Hofmann, T. ; Schubert, M. ; Tiwald, T. E. ; Iakimov, T. ; Vasiliauskas, R. and Yakimova, R.
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 102
- issue
- 21
- article number
- 213116
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000320620400073
- scopus:84879068916
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4808379
- language
- English
- LU publication?
- yes
- id
- 3e9c0536-41e8-42a8-be33-48a57266081c (old id 3979906)
- date added to LUP
- 2016-04-01 11:02:26
- date last changed
- 2022-01-26 04:53:57
@article{3e9c0536-41e8-42a8-be33-48a57266081c,
abstract = {{Microfocal spectroscopic ellipsometry mapping of the electronic properties and thickness of epitaxial graphene grown by high-temperature sublimation on 3C-SiC (111) substrates is reported. Growth of one monolayer graphene is demonstrated on both Si- and C-polarity of the 3C-SiC substrates and it is shown that large area homogeneous single monolayer graphene can be achieved on the Si-face substrates. Correlations between the number of graphene monolayers on one hand and the main transition associated with an exciton enhanced van Hove singularity at similar to 4.5 eV and the free-charge carrier scattering time, on the other are established. It is shown that the interface structure on the Si-and C-polarity of the 3C-SiC(111) differs and has a determining role for the thickness and electronic properties homogeneity of the epitaxial graphene. (C) 2013 AIP Publishing LLC.}},
author = {{Darakchieva, V. and Boosalis, A. and Zakharov, Alexei and Hofmann, T. and Schubert, M. and Tiwald, T. E. and Iakimov, T. and Vasiliauskas, R. and Yakimova, R.}},
issn = {{0003-6951}},
language = {{eng}},
number = {{21}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111)}},
url = {{http://dx.doi.org/10.1063/1.4808379}},
doi = {{10.1063/1.4808379}},
volume = {{102}},
year = {{2013}},
}