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Time-resolved photoluminescence investigations on HfO2-capped InP nanowires

Muench, S.; Reitzenstein, S.; Borgström, Magnus LU ; Thelander, Claes LU ; Samuelson, Lars LU ; Worschech, L. and Forchel, A. (2010) In Nanotechnology 21(10).
Abstract
We have employed time-resolved photoluminescence (PL) spectroscopy to study the impact of HfO2 surface capping by atomic layer deposition (ALD) on the optical properties of InP nanowires (NWs). The deposition of high-kappa dielectrics acting as a gate oxide is of particular interest in view of possible applications of semiconductor NWs in future wrap-gated field effect transistors (FETs). A high number of charged states at the NW-dielectrics interface can strongly degrade the performance of the FET which explains the strong interest in high quality deposition of high-kappa dielectrics. In the present work we show that time-resolved spectroscopy is a valuable and direct tool to monitor the surface quality of HfO2-capped InP NWs. In... (More)
We have employed time-resolved photoluminescence (PL) spectroscopy to study the impact of HfO2 surface capping by atomic layer deposition (ALD) on the optical properties of InP nanowires (NWs). The deposition of high-kappa dielectrics acting as a gate oxide is of particular interest in view of possible applications of semiconductor NWs in future wrap-gated field effect transistors (FETs). A high number of charged states at the NW-dielectrics interface can strongly degrade the performance of the FET which explains the strong interest in high quality deposition of high-kappa dielectrics. In the present work we show that time-resolved spectroscopy is a valuable and direct tool to monitor the surface quality of HfO2-capped InP NWs. In particular, we have studied the impact of ALD process parameters as well as surface treatment prior to the oxide capping on the NW-dielectrics interface quality. The best results in terms of the surface recombination velocity (S-0 = 9.5 x 10(3) cm s(-1)) were obtained for InP/GaP core/shell NWs in combination with a low temperature (100 degrees C) ALD process. While the present report focuses on the InP material system, our method of addressing the surface treatment for semiconductors with high-kappa dielectrics will also be applicable to nanoelectronic devices based on other III/V material systems such as InAs. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
21
issue
10
publisher
IOP Publishing
external identifiers
  • wos:000274572900034
  • scopus:77149151611
ISSN
0957-4484
DOI
10.1088/0957-4484/21/10/105711
language
English
LU publication?
yes
id
a7e8fed6-2a90-4793-9e3a-2d28f30790a7 (old id 1568466)
date added to LUP
2010-03-23 09:11:59
date last changed
2018-05-29 11:16:47
@article{a7e8fed6-2a90-4793-9e3a-2d28f30790a7,
  abstract     = {We have employed time-resolved photoluminescence (PL) spectroscopy to study the impact of HfO2 surface capping by atomic layer deposition (ALD) on the optical properties of InP nanowires (NWs). The deposition of high-kappa dielectrics acting as a gate oxide is of particular interest in view of possible applications of semiconductor NWs in future wrap-gated field effect transistors (FETs). A high number of charged states at the NW-dielectrics interface can strongly degrade the performance of the FET which explains the strong interest in high quality deposition of high-kappa dielectrics. In the present work we show that time-resolved spectroscopy is a valuable and direct tool to monitor the surface quality of HfO2-capped InP NWs. In particular, we have studied the impact of ALD process parameters as well as surface treatment prior to the oxide capping on the NW-dielectrics interface quality. The best results in terms of the surface recombination velocity (S-0 = 9.5 x 10(3) cm s(-1)) were obtained for InP/GaP core/shell NWs in combination with a low temperature (100 degrees C) ALD process. While the present report focuses on the InP material system, our method of addressing the surface treatment for semiconductors with high-kappa dielectrics will also be applicable to nanoelectronic devices based on other III/V material systems such as InAs.},
  articleno    = {105711},
  author       = {Muench, S. and Reitzenstein, S. and Borgström, Magnus and Thelander, Claes and Samuelson, Lars and Worschech, L. and Forchel, A.},
  issn         = {0957-4484},
  language     = {eng},
  number       = {10},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Time-resolved photoluminescence investigations on HfO2-capped InP nanowires},
  url          = {http://dx.doi.org/10.1088/0957-4484/21/10/105711},
  volume       = {21},
  year         = {2010},
}