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Giant anisotropic magnetoresistance in insulating ultrathin (Ga,Mn)As

Gareev, R. R.; Petukhov, A.; Schlapps, M.; Sadowski, Janusz LU and Wegscheider, W. (2010) In Applied Physics Letters 96(5).
Abstract
Molecular-beam epitaxy grown, 5 nm thick annealed Ga0.95Mn0.05As films demonstrate transition from metallic to insulating state for sheet resistances near resistance quantum, which we connect with the two-dimensional hole localization. Below the metal-insulator transition we found the giant anisotropic magnetoresistance (GAMR) effect, which depends on the orientation of magnetization to crystallographic axes and demonstrates the twofold symmetry angular dependence. The GAMR manifests itself in positive magnetoresistance near 50% at T=1.7 K for H//[110] crystallographic direction in contrast to smaller negative magnetoresistance for H//[110] direction. We connect the GAMR with formation of high- and low-resistance states with different... (More)
Molecular-beam epitaxy grown, 5 nm thick annealed Ga0.95Mn0.05As films demonstrate transition from metallic to insulating state for sheet resistances near resistance quantum, which we connect with the two-dimensional hole localization. Below the metal-insulator transition we found the giant anisotropic magnetoresistance (GAMR) effect, which depends on the orientation of magnetization to crystallographic axes and demonstrates the twofold symmetry angular dependence. The GAMR manifests itself in positive magnetoresistance near 50% at T=1.7 K for H//[110] crystallographic direction in contrast to smaller negative magnetoresistance for H//[110] direction. We connect the GAMR with formation of high- and low-resistance states with different localization due to anisotropic spin-orbit interaction. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
metal-insulator transition, compounds, manganese, magnetisation, magnetic anisotropy, magnetoresistance, giant, gallium arsenide, crystal orientation, electric resistance, molecular beam epitaxial growth, semimagnetic semiconductors, spin-orbit interactions
in
Applied Physics Letters
volume
96
issue
5
publisher
American Institute of Physics
external identifiers
  • wos:000274319500055
  • scopus:76449106377
ISSN
0003-6951
DOI
10.1063/1.3309683
language
English
LU publication?
yes
id
e1ab3a01-0a71-456d-8fa2-af4baf8597f3 (old id 1571211)
date added to LUP
2010-03-16 14:17:09
date last changed
2018-05-29 12:13:25
@article{e1ab3a01-0a71-456d-8fa2-af4baf8597f3,
  abstract     = {Molecular-beam epitaxy grown, 5 nm thick annealed Ga0.95Mn0.05As films demonstrate transition from metallic to insulating state for sheet resistances near resistance quantum, which we connect with the two-dimensional hole localization. Below the metal-insulator transition we found the giant anisotropic magnetoresistance (GAMR) effect, which depends on the orientation of magnetization to crystallographic axes and demonstrates the twofold symmetry angular dependence. The GAMR manifests itself in positive magnetoresistance near 50% at T=1.7 K for H//[110] crystallographic direction in contrast to smaller negative magnetoresistance for H//[110] direction. We connect the GAMR with formation of high- and low-resistance states with different localization due to anisotropic spin-orbit interaction.},
  author       = {Gareev, R. R. and Petukhov, A. and Schlapps, M. and Sadowski, Janusz and Wegscheider, W.},
  issn         = {0003-6951},
  keyword      = {metal-insulator transition,compounds,manganese,magnetisation,magnetic anisotropy,magnetoresistance,giant,gallium arsenide,crystal orientation,electric resistance,molecular beam epitaxial growth,semimagnetic semiconductors,spin-orbit interactions},
  language     = {eng},
  number       = {5},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Giant anisotropic magnetoresistance in insulating ultrathin (Ga,Mn)As},
  url          = {http://dx.doi.org/10.1063/1.3309683},
  volume       = {96},
  year         = {2010},
}