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Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

Plissard, S. ; Dick Thelander, Kimberly LU ; Wallart, X. and Caroff, P. (2010) In Applied Physics Letters 96(12).
Abstract
Growth of GaAs/GaAsSb heterostructure nanowires on silicon without the need for gold seed particles is presented. A high vertical yield of GaAs nanowires is first obtained, and then GaAsxSb1-x segments are successfully grown axially in these nanowires. GaAsSb can also be integrated as a shell around the GaAs core. Finally, two GaAsSb segments are grown inside a GaAs nanowire and passivated using an AlxGa1-xAs shell. It is found that no stacking faults or twin planes occur in the GaAsSb segments.
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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
semiconductor quantum wires, semiconductor, semiconductor growth, nanowires, nanofabrication, growth, molecular beam epitaxial, gallium arsenide, III-V semiconductors, heterojunctions
in
Applied Physics Letters
volume
96
issue
12
article number
121901
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000276077200013
  • scopus:77950325845
ISSN
0003-6951
DOI
10.1063/1.3367746
language
English
LU publication?
yes
id
93b6e9f7-497e-4886-ac5d-f42e7086bb8b (old id 1587177)
date added to LUP
2016-04-01 10:59:44
date last changed
2023-11-10 10:22:04
@article{93b6e9f7-497e-4886-ac5d-f42e7086bb8b,
  abstract     = {{Growth of GaAs/GaAsSb heterostructure nanowires on silicon without the need for gold seed particles is presented. A high vertical yield of GaAs nanowires is first obtained, and then GaAsxSb1-x segments are successfully grown axially in these nanowires. GaAsSb can also be integrated as a shell around the GaAs core. Finally, two GaAsSb segments are grown inside a GaAs nanowire and passivated using an AlxGa1-xAs shell. It is found that no stacking faults or twin planes occur in the GaAsSb segments.}},
  author       = {{Plissard, S. and Dick Thelander, Kimberly and Wallart, X. and Caroff, P.}},
  issn         = {{0003-6951}},
  keywords     = {{semiconductor quantum wires; semiconductor; semiconductor growth; nanowires; nanofabrication; growth; molecular beam epitaxial; gallium arsenide; III-V semiconductors; heterojunctions}},
  language     = {{eng}},
  number       = {{12}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon}},
  url          = {{http://dx.doi.org/10.1063/1.3367746}},
  doi          = {{10.1063/1.3367746}},
  volume       = {{96}},
  year         = {{2010}},
}