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Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

Plissard, S.; Dick Thelander, Kimberly LU ; Wallart, X. and Caroff, P. (2010) In Applied Physics Letters 96(12).
Abstract
Growth of GaAs/GaAsSb heterostructure nanowires on silicon without the need for gold seed particles is presented. A high vertical yield of GaAs nanowires is first obtained, and then GaAsxSb1-x segments are successfully grown axially in these nanowires. GaAsSb can also be integrated as a shell around the GaAs core. Finally, two GaAsSb segments are grown inside a GaAs nanowire and passivated using an AlxGa1-xAs shell. It is found that no stacking faults or twin planes occur in the GaAsSb segments.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
semiconductor quantum wires, semiconductor, semiconductor growth, nanowires, nanofabrication, growth, molecular beam epitaxial, gallium arsenide, III-V semiconductors, heterojunctions
in
Applied Physics Letters
volume
96
issue
12
publisher
American Institute of Physics
external identifiers
  • wos:000276077200013
  • scopus:77950325845
ISSN
0003-6951
DOI
10.1063/1.3367746
language
English
LU publication?
yes
id
93b6e9f7-497e-4886-ac5d-f42e7086bb8b (old id 1587177)
date added to LUP
2010-04-27 09:09:56
date last changed
2018-07-15 03:20:39
@article{93b6e9f7-497e-4886-ac5d-f42e7086bb8b,
  abstract     = {Growth of GaAs/GaAsSb heterostructure nanowires on silicon without the need for gold seed particles is presented. A high vertical yield of GaAs nanowires is first obtained, and then GaAsxSb1-x segments are successfully grown axially in these nanowires. GaAsSb can also be integrated as a shell around the GaAs core. Finally, two GaAsSb segments are grown inside a GaAs nanowire and passivated using an AlxGa1-xAs shell. It is found that no stacking faults or twin planes occur in the GaAsSb segments.},
  articleno    = {121901},
  author       = {Plissard, S. and Dick Thelander, Kimberly and Wallart, X. and Caroff, P.},
  issn         = {0003-6951},
  keyword      = {semiconductor quantum wires,semiconductor,semiconductor growth,nanowires,nanofabrication,growth,molecular beam epitaxial,gallium arsenide,III-V semiconductors,heterojunctions},
  language     = {eng},
  number       = {12},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon},
  url          = {http://dx.doi.org/10.1063/1.3367746},
  volume       = {96},
  year         = {2010},
}