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Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching

Kallesoe, Christian; Molhave, Kristian; Larsen, Kasper F.; Engstrom, Daniel; Hansen, Torben M.; Boggild, Peter; Mårtensson, Thomas LU ; Borgström, Magnus LU and Samuelson, Lars LU (2010) In Journal of Vacuum Science and Technology B 28(1). p.21-26
Abstract
Epitaxial growth of heterostructure nanowires allows for the definition of narrow sections with specific semiconductor composition. The authors demonstrate how postgrowth engineering of III-V heterostructure nanowires using selective etching can form gaps, sharpening of tips, and thin sections simultaneously on multiple nanowires. They investigate the potential of combining nanostencil deposition of catalyst, epitaxial III-V heterostructure nanowire growth, and selective etching, as a road toward wafer scale integration and engineering of nanowires with existing silicon technology. Nanostencil lithography is used for deposition of catalyst particles on trench sidewalls and the lateral growth of III-V nanowires is achieved from such... (More)
Epitaxial growth of heterostructure nanowires allows for the definition of narrow sections with specific semiconductor composition. The authors demonstrate how postgrowth engineering of III-V heterostructure nanowires using selective etching can form gaps, sharpening of tips, and thin sections simultaneously on multiple nanowires. They investigate the potential of combining nanostencil deposition of catalyst, epitaxial III-V heterostructure nanowire growth, and selective etching, as a road toward wafer scale integration and engineering of nanowires with existing silicon technology. Nanostencil lithography is used for deposition of catalyst particles on trench sidewalls and the lateral growth of III-V nanowires is achieved from such catalysts. The selectivity of a bromine-based etch on gallium arsenide segments in gallium phosphide nanowires is examined, using a hydrochloride etch to remove the III-V native oxides. Depending on the etching conditions, a variety of gap topologies and tiplike structures are observed, offering postgrowth engineering of material composition and morphology. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
nanowires, semiconductor quantum wires, nanolithography, III-V semiconductors, compounds, gallium, gallium arsenide, etching, catalysts, epitaxial growth
in
Journal of Vacuum Science and Technology B
volume
28
issue
1
pages
21 - 26
publisher
American Institute of Physics
external identifiers
  • wos:000275511800034
  • scopus:77949405017
ISSN
1520-8567
DOI
10.1116/1.3268135
language
English
LU publication?
yes
id
eebfe676-08dd-4e0e-91c4-cefab516d63e (old id 1588315)
date added to LUP
2010-04-22 09:30:51
date last changed
2018-05-29 09:57:12
@article{eebfe676-08dd-4e0e-91c4-cefab516d63e,
  abstract     = {Epitaxial growth of heterostructure nanowires allows for the definition of narrow sections with specific semiconductor composition. The authors demonstrate how postgrowth engineering of III-V heterostructure nanowires using selective etching can form gaps, sharpening of tips, and thin sections simultaneously on multiple nanowires. They investigate the potential of combining nanostencil deposition of catalyst, epitaxial III-V heterostructure nanowire growth, and selective etching, as a road toward wafer scale integration and engineering of nanowires with existing silicon technology. Nanostencil lithography is used for deposition of catalyst particles on trench sidewalls and the lateral growth of III-V nanowires is achieved from such catalysts. The selectivity of a bromine-based etch on gallium arsenide segments in gallium phosphide nanowires is examined, using a hydrochloride etch to remove the III-V native oxides. Depending on the etching conditions, a variety of gap topologies and tiplike structures are observed, offering postgrowth engineering of material composition and morphology.},
  author       = {Kallesoe, Christian and Molhave, Kristian and Larsen, Kasper F. and Engstrom, Daniel and Hansen, Torben M. and Boggild, Peter and Mårtensson, Thomas and Borgström, Magnus and Samuelson, Lars},
  issn         = {1520-8567},
  keyword      = {nanowires,semiconductor quantum wires,nanolithography,III-V semiconductors,compounds,gallium,gallium arsenide,etching,catalysts,epitaxial growth},
  language     = {eng},
  number       = {1},
  pages        = {21--26},
  publisher    = {American Institute of Physics},
  series       = {Journal of Vacuum Science and Technology B},
  title        = {Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching},
  url          = {http://dx.doi.org/10.1116/1.3268135},
  volume       = {28},
  year         = {2010},
}