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Bias-controlled friction of InAs nanowires on a silicon nitride layer studied by atomic force microscopy

Conache, Gabriela LU ; Ribayrol, Aline LU ; Fröberg, Linus LU ; Borgström, Magnus LU orcid ; Samuelson, Lars LU ; Montelius, Lars LU ; Pettersson, H. and Gray, Struan LU (2010) In Physical Review B (Condensed Matter and Materials Physics) 82(3).
Abstract
By studying how nanowires lying on a surface bend when pushed by an atomic force microscopy tip we are able to measure the friction between them and the substrate. Here, we show how the friction between InAs nanowires and an insulating silicon nitride layer varies when a dc voltage is applied to the tip during manipulation. The bias charges the capacitor formed by the wire and the grounded silicon back contact. Electrostatic forces increase the contact pressure and allow us to tune the friction between the wire and the silicon nitride surface. Using nanowires of about 40-70 nm diameter and a few microns in length we have applied biases in the range +12 to -12 V. A monotonic increase of the sliding friction with voltage was observed. This... (More)
By studying how nanowires lying on a surface bend when pushed by an atomic force microscopy tip we are able to measure the friction between them and the substrate. Here, we show how the friction between InAs nanowires and an insulating silicon nitride layer varies when a dc voltage is applied to the tip during manipulation. The bias charges the capacitor formed by the wire and the grounded silicon back contact. Electrostatic forces increase the contact pressure and allow us to tune the friction between the wire and the silicon nitride surface. Using nanowires of about 40-70 nm diameter and a few microns in length we have applied biases in the range +12 to -12 V. A monotonic increase of the sliding friction with voltage was observed. This increase in friction with the normal force implies that the mesoscopic nanowire-surface system behaves like a macroscopic contact, despite the nanometer size of the contact in the direction of motion. The demonstrated bias-controlled friction has potential applications in MEMS/NEMS devices. (Less)
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
82
issue
3
article number
035403
publisher
American Physical Society
external identifiers
  • wos:000279471500001
  • scopus:77956669905
ISSN
1098-0121
DOI
10.1103/PhysRevB.82.035403
language
English
LU publication?
yes
id
6bf52449-266f-4652-ae1f-8be61d01b479 (old id 1628717)
date added to LUP
2016-04-01 14:43:05
date last changed
2024-10-10 20:44:27
@article{6bf52449-266f-4652-ae1f-8be61d01b479,
  abstract     = {{By studying how nanowires lying on a surface bend when pushed by an atomic force microscopy tip we are able to measure the friction between them and the substrate. Here, we show how the friction between InAs nanowires and an insulating silicon nitride layer varies when a dc voltage is applied to the tip during manipulation. The bias charges the capacitor formed by the wire and the grounded silicon back contact. Electrostatic forces increase the contact pressure and allow us to tune the friction between the wire and the silicon nitride surface. Using nanowires of about 40-70 nm diameter and a few microns in length we have applied biases in the range +12 to -12 V. A monotonic increase of the sliding friction with voltage was observed. This increase in friction with the normal force implies that the mesoscopic nanowire-surface system behaves like a macroscopic contact, despite the nanometer size of the contact in the direction of motion. The demonstrated bias-controlled friction has potential applications in MEMS/NEMS devices.}},
  author       = {{Conache, Gabriela and Ribayrol, Aline and Fröberg, Linus and Borgström, Magnus and Samuelson, Lars and Montelius, Lars and Pettersson, H. and Gray, Struan}},
  issn         = {{1098-0121}},
  language     = {{eng}},
  number       = {{3}},
  publisher    = {{American Physical Society}},
  series       = {{Physical Review B (Condensed Matter and Materials Physics)}},
  title        = {{Bias-controlled friction of InAs nanowires on a silicon nitride layer studied by atomic force microscopy}},
  url          = {{http://dx.doi.org/10.1103/PhysRevB.82.035403}},
  doi          = {{10.1103/PhysRevB.82.035403}},
  volume       = {{82}},
  year         = {{2010}},
}