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Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors

Lind, Erik LU ; Niquet, Yann-Michel; Mera, Hector and Wernersson, Lars-Erik LU (2010) In Applied Physics Letters 96(23).
Abstract
We have investigated the accumulation capacitance-voltage characteristics for capacitors with narrow band gap materials using modeling and experiments. The capacitance for InAs and In0.53Ga0.47As capacitors with a HfO2 oxide layer has been calculated using atomistic tight-binding, effective mass, and semiclassical nonparabolic models. The simulations show that band structure effects have a strong influence on the accumulation capacitance, and are essential for the description of narrow band gap capacitors. The calculated tight binding data compare well with measurements on n-type InAs HfO2 capacitors on (100) and (111) B substrates, highlighting the nonparabolicity as the main origin for the large accumulation capacitance. (C) 2010... (More)
We have investigated the accumulation capacitance-voltage characteristics for capacitors with narrow band gap materials using modeling and experiments. The capacitance for InAs and In0.53Ga0.47As capacitors with a HfO2 oxide layer has been calculated using atomistic tight-binding, effective mass, and semiclassical nonparabolic models. The simulations show that band structure effects have a strong influence on the accumulation capacitance, and are essential for the description of narrow band gap capacitors. The calculated tight binding data compare well with measurements on n-type InAs HfO2 capacitors on (100) and (111) B substrates, highlighting the nonparabolicity as the main origin for the large accumulation capacitance. (C) 2010 American Institute of Physics. [doi:10.1063/1.3449559] (Less)
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author
organization
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type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
96
issue
23
publisher
American Institute of Physics
external identifiers
  • wos:000278695900081
  • scopus:77953501984
ISSN
0003-6951
DOI
10.1063/1.3449559
language
English
LU publication?
yes
id
e851e659-e453-419e-a2f0-fc707b9cb153 (old id 1631591)
date added to LUP
2010-07-22 13:53:53
date last changed
2018-06-17 03:17:12
@article{e851e659-e453-419e-a2f0-fc707b9cb153,
  abstract     = {We have investigated the accumulation capacitance-voltage characteristics for capacitors with narrow band gap materials using modeling and experiments. The capacitance for InAs and In0.53Ga0.47As capacitors with a HfO2 oxide layer has been calculated using atomistic tight-binding, effective mass, and semiclassical nonparabolic models. The simulations show that band structure effects have a strong influence on the accumulation capacitance, and are essential for the description of narrow band gap capacitors. The calculated tight binding data compare well with measurements on n-type InAs HfO2 capacitors on (100) and (111) B substrates, highlighting the nonparabolicity as the main origin for the large accumulation capacitance. (C) 2010 American Institute of Physics. [doi:10.1063/1.3449559]},
  articleno    = {233507},
  author       = {Lind, Erik and Niquet, Yann-Michel and Mera, Hector and Wernersson, Lars-Erik},
  issn         = {0003-6951},
  language     = {eng},
  number       = {23},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors},
  url          = {http://dx.doi.org/10.1063/1.3449559},
  volume       = {96},
  year         = {2010},
}