Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors
Lind, Erik LU
; Niquet, Yann-Michel
; Mera, Hector
and Wernersson, Lars-Erik
LU
(2010)
In Applied Physics Letters
96(23).
- Abstract
- We have investigated the accumulation capacitance-voltage characteristics for capacitors with narrow band gap materials using modeling and experiments. The capacitance for InAs and In0.53Ga0.47As capacitors with a HfO2 oxide layer has been calculated using atomistic tight-binding, effective mass, and semiclassical nonparabolic models. The simulations show that band structure effects have a strong influence on the accumulation capacitance, and are essential for the description of narrow band gap capacitors. The calculated tight binding data compare well with measurements on n-type InAs HfO2 capacitors on (100) and (111) B substrates, highlighting the nonparabolicity as the main origin for the large accumulation capacitance. (C) 2010... (More)
- We have investigated the accumulation capacitance-voltage characteristics for capacitors with narrow band gap materials using modeling and experiments. The capacitance for InAs and In0.53Ga0.47As capacitors with a HfO2 oxide layer has been calculated using atomistic tight-binding, effective mass, and semiclassical nonparabolic models. The simulations show that band structure effects have a strong influence on the accumulation capacitance, and are essential for the description of narrow band gap capacitors. The calculated tight binding data compare well with measurements on n-type InAs HfO2 capacitors on (100) and (111) B substrates, highlighting the nonparabolicity as the main origin for the large accumulation capacitance. (C) 2010 American Institute of Physics. [doi:10.1063/1.3449559] (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1631591
- author
- Lind, Erik
LU
; Niquet, Yann-Michel
; Mera, Hector
and Wernersson, Lars-Erik
LU
- organization
- publishing date
- 2010
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 96
- issue
- 23
- article number
- 233507
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000278695900081
- scopus:77953501984
- ISSN
- 0003-6951
- DOI
- 10.1063/1.3449559
- language
- English
- LU publication?
- yes
- id
- e851e659-e453-419e-a2f0-fc707b9cb153 (old id 1631591)
- date added to LUP
- 2016-04-01 10:20:45
- date last changed
- 2024-01-06 14:22:12
@article{e851e659-e453-419e-a2f0-fc707b9cb153,
abstract = {{We have investigated the accumulation capacitance-voltage characteristics for capacitors with narrow band gap materials using modeling and experiments. The capacitance for InAs and In0.53Ga0.47As capacitors with a HfO2 oxide layer has been calculated using atomistic tight-binding, effective mass, and semiclassical nonparabolic models. The simulations show that band structure effects have a strong influence on the accumulation capacitance, and are essential for the description of narrow band gap capacitors. The calculated tight binding data compare well with measurements on n-type InAs HfO2 capacitors on (100) and (111) B substrates, highlighting the nonparabolicity as the main origin for the large accumulation capacitance. (C) 2010 American Institute of Physics. [doi:10.1063/1.3449559]}},
author = {{Lind, Erik and Niquet, Yann-Michel and Mera, Hector and Wernersson, Lars-Erik}},
issn = {{0003-6951}},
language = {{eng}},
number = {{23}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors}},
url = {{http://dx.doi.org/10.1063/1.3449559}},
doi = {{10.1063/1.3449559}},
volume = {{96}},
year = {{2010}},
}