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Nanometer-scale two-terminal semiconductor memory operating at room temperature

Song, Aimin LU ; Missous, M ; Omling, Pär LU ; Maximov, Ivan LU orcid ; Seifert, Werner LU and Samuelson, Lars LU (2005) In Applied Physics Letters 86(4).
Abstract
Based on a nanometer-scale semiconductor channel with an intentionally broken geometric symmetry, we have realized a type of memory device that consists of only two terminals, rather than the minimum of three terminals in conventional semiconductor memories. The charge retention time is at least 10 h at cryogenic temperatures and a few minutes at room temperature. Furthermore, the simplicity of the design allows the active part of the devices to be made in a single nanolithography step which, along with the planar structure of the device, provides promising possibilities for a high integration density. (C) 2005 American Institute of Physics.
Please use this url to cite or link to this publication:
author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
86
issue
4
article number
042106
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000226761400037
  • scopus:13644278175
ISSN
0003-6951
DOI
10.1063/1.1852711
language
English
LU publication?
yes
id
165b10cc-db8a-4121-b447-a524fc7b3a93 (old id 912199)
date added to LUP
2016-04-01 12:20:08
date last changed
2025-10-14 11:19:23
@article{165b10cc-db8a-4121-b447-a524fc7b3a93,
  abstract     = {{Based on a nanometer-scale semiconductor channel with an intentionally broken geometric symmetry, we have realized a type of memory device that consists of only two terminals, rather than the minimum of three terminals in conventional semiconductor memories. The charge retention time is at least 10 h at cryogenic temperatures and a few minutes at room temperature. Furthermore, the simplicity of the design allows the active part of the devices to be made in a single nanolithography step which, along with the planar structure of the device, provides promising possibilities for a high integration density. (C) 2005 American Institute of Physics.}},
  author       = {{Song, Aimin and Missous, M and Omling, Pär and Maximov, Ivan and Seifert, Werner and Samuelson, Lars}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{4}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Nanometer-scale two-terminal semiconductor memory operating at room temperature}},
  url          = {{http://dx.doi.org/10.1063/1.1852711}},
  doi          = {{10.1063/1.1852711}},
  volume       = {{86}},
  year         = {{2005}},
}