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Crystal Phase Engineering in Single InAs Nanowires.

Dick Thelander, Kimberly LU ; Thelander, Claes LU ; Samuelson, Lars LU and Caroff, Philippe LU (2010) In Nano Letters 10(9). p.3494-3499
Abstract
Achieving phase purity and control in III-V nanowires is a necessity for future nanowire-based device applications. Many works have focused on cleaning specific crystal phases of defects such as twin planes and stacking faults, using parameters such as diameter, temperature, and impurity incorporation. Here we demonstrate an improved method for crystal phase control, where crystal structure variations in single InAs nanowires are designed with alternating wurtzite (WZ) and zinc blende (ZB) segments of precisely controlled length and perfect interfaces. We also demonstrate the inclusion of single twin planes and stacking faults with atomic precision in their placement, designed ZB quantum dots separated by thin segments of WZ, acting as... (More)
Achieving phase purity and control in III-V nanowires is a necessity for future nanowire-based device applications. Many works have focused on cleaning specific crystal phases of defects such as twin planes and stacking faults, using parameters such as diameter, temperature, and impurity incorporation. Here we demonstrate an improved method for crystal phase control, where crystal structure variations in single InAs nanowires are designed with alternating wurtzite (WZ) and zinc blende (ZB) segments of precisely controlled length and perfect interfaces. We also demonstrate the inclusion of single twin planes and stacking faults with atomic precision in their placement, designed ZB quantum dots separated by thin segments of WZ, acting as tunnel barriers for electrons, and structural superlattices (polytypic and twin plane). Finally, we present electrical data to demonstrate the applicability of these designed structures to investigation of fundamental properties. From electrical measurements we observe clear signatures of controlled structural quantum dots in nanowires. This method will be directly applicable to a wide range of nanowire systems. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
10
issue
9
pages
3494 - 3499
publisher
The American Chemical Society
external identifiers
  • wos:000281498200047
  • pmid:20707361
  • scopus:77956448822
ISSN
1530-6992
DOI
10.1021/nl101632a
language
English
LU publication?
yes
id
7a0be647-6bd0-4bcf-94d6-9c0ae3c51867 (old id 1665270)
date added to LUP
2010-09-09 14:03:48
date last changed
2018-07-15 03:59:58
@article{7a0be647-6bd0-4bcf-94d6-9c0ae3c51867,
  abstract     = {Achieving phase purity and control in III-V nanowires is a necessity for future nanowire-based device applications. Many works have focused on cleaning specific crystal phases of defects such as twin planes and stacking faults, using parameters such as diameter, temperature, and impurity incorporation. Here we demonstrate an improved method for crystal phase control, where crystal structure variations in single InAs nanowires are designed with alternating wurtzite (WZ) and zinc blende (ZB) segments of precisely controlled length and perfect interfaces. We also demonstrate the inclusion of single twin planes and stacking faults with atomic precision in their placement, designed ZB quantum dots separated by thin segments of WZ, acting as tunnel barriers for electrons, and structural superlattices (polytypic and twin plane). Finally, we present electrical data to demonstrate the applicability of these designed structures to investigation of fundamental properties. From electrical measurements we observe clear signatures of controlled structural quantum dots in nanowires. This method will be directly applicable to a wide range of nanowire systems.},
  author       = {Dick Thelander, Kimberly and Thelander, Claes and Samuelson, Lars and Caroff, Philippe},
  issn         = {1530-6992},
  language     = {eng},
  number       = {9},
  pages        = {3494--3499},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Crystal Phase Engineering in Single InAs Nanowires.},
  url          = {http://dx.doi.org/10.1021/nl101632a},
  volume       = {10},
  year         = {2010},
}