Semiconductor nanowires as a bottom-up approach to realize nanoelectronic and nanophotonic devices
(2010) 3rd IEEE International Nanoelectronics Conference p.34-35- Abstract
- In this presentation will be given an up-date of the status of epitaxially grown III-V nanowires, from the perspective of growth, processing, physics and applications in the areas of nanoelectronics and nanophotonics
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1695388
- author
- Samuelson, Lars LU
- organization
- publishing date
- 2010
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- INEC: 2010 3rd International Nanoelectronics Conference, vols 1 and 2
- pages
- 34 - 35
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 3rd IEEE International Nanoelectronics Conference
- conference location
- Hong Kong, China
- conference dates
- 2010-01-03 - 2010-01-08
- external identifiers
-
- wos:000282026500016
- scopus:77951661063
- language
- English
- LU publication?
- yes
- id
- 31b843b2-f11d-4a2d-9f50-df5cd4354b2e (old id 1695388)
- date added to LUP
- 2016-04-04 12:08:31
- date last changed
- 2023-09-06 13:20:04
@inproceedings{31b843b2-f11d-4a2d-9f50-df5cd4354b2e, abstract = {{In this presentation will be given an up-date of the status of epitaxially grown III-V nanowires, from the perspective of growth, processing, physics and applications in the areas of nanoelectronics and nanophotonics}}, author = {{Samuelson, Lars}}, booktitle = {{INEC: 2010 3rd International Nanoelectronics Conference, vols 1 and 2}}, language = {{eng}}, pages = {{34--35}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{Semiconductor nanowires as a bottom-up approach to realize nanoelectronic and nanophotonic devices}}, year = {{2010}}, }