Nano-Schottky Contacts Realized by Bottom-up Technique
(2010) 3rd IEEE International Nanoelectronics Conference p.252-253- Abstract
- Properties of nanostructures realized by bottom-up techniques are often different from their bulk counterparts.(1) Here we present a study of a nano-Schottky contact formed at the interface between a gold catalytic particle and an epitaxially grown GaxIn1-xAs/InAs nanowire. Selective electrical connections formed to the catalytic particle on one side and to the In As segment on the other side allowed electrical and optical characterization of the formed junction. We demonstrate that the heterostructure region adjacent to the catalytic particle may act as an ultra-small volume unipolar photodetector with potentially ultra-fast response.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1695390
- author
- Suyatin, Dmitry
LU
; Trägårdh, Johanna LU ; Messing, Maria LU ; Wagner, Jakob LU ; Montelius, Lars LU ; Pettersson, H. and Samuelson, Lars LU
- organization
- publishing date
- 2010
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- INEC: 2010 3rd International Nanoelectronics Conference, vols 1 and 2
- pages
- 252 - 253
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 3rd IEEE International Nanoelectronics Conference
- conference location
- Hong Kong, China
- conference dates
- 2010-01-03 - 2010-01-08
- external identifiers
-
- wos:000282026500128
- scopus:77951661599
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
- id
- 02282290-39a6-466e-b73d-bda9cdb1b122 (old id 1695390)
- date added to LUP
- 2016-04-04 12:15:06
- date last changed
- 2025-04-04 15:00:28
@inproceedings{02282290-39a6-466e-b73d-bda9cdb1b122, abstract = {{Properties of nanostructures realized by bottom-up techniques are often different from their bulk counterparts.(1) Here we present a study of a nano-Schottky contact formed at the interface between a gold catalytic particle and an epitaxially grown GaxIn1-xAs/InAs nanowire. Selective electrical connections formed to the catalytic particle on one side and to the In As segment on the other side allowed electrical and optical characterization of the formed junction. We demonstrate that the heterostructure region adjacent to the catalytic particle may act as an ultra-small volume unipolar photodetector with potentially ultra-fast response.}}, author = {{Suyatin, Dmitry and Trägårdh, Johanna and Messing, Maria and Wagner, Jakob and Montelius, Lars and Pettersson, H. and Samuelson, Lars}}, booktitle = {{INEC: 2010 3rd International Nanoelectronics Conference, vols 1 and 2}}, language = {{eng}}, pages = {{252--253}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{Nano-Schottky Contacts Realized by Bottom-up Technique}}, year = {{2010}}, }