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Large homogeneous mono-/bi-layer graphene on 6H-SiC(0001) and buffer layer elimination

Virojanadara, C.; Yakimova, R.; Zakharov, Alexei LU and Johansson, L. I. (2010) In Journal of Physics D: Applied Physics 43(37).
Abstract
In this paper we discuss and review results of recent studies of epitaxial growth of graphene on silicon carbide. The presentation is focused on high quality, large and uniform layer graphene growth on the SiC(0 0 0 1) surface and the results of using different growth techniques and parameters are compared. This is an important subject because access to high-quality graphene sheets on a suitable substrate plays a crucial role for future electronics applications involving patterning. Different techniques used to characterize the graphene grown are summarized. We moreover show that atomic hydrogen exposures can convert a monolayer graphene sample on SiC(0 0 0 1) to bi-layer graphene without the carbon buffer layer. Thus, a new process to... (More)
In this paper we discuss and review results of recent studies of epitaxial growth of graphene on silicon carbide. The presentation is focused on high quality, large and uniform layer graphene growth on the SiC(0 0 0 1) surface and the results of using different growth techniques and parameters are compared. This is an important subject because access to high-quality graphene sheets on a suitable substrate plays a crucial role for future electronics applications involving patterning. Different techniques used to characterize the graphene grown are summarized. We moreover show that atomic hydrogen exposures can convert a monolayer graphene sample on SiC(0 0 0 1) to bi-layer graphene without the carbon buffer layer. Thus, a new process to prepare large, homogeneous stable bi-layer graphene sheets on SiC(0 0 0 1) is presented. The process is shown to be reversible and should be very attractive for various applications, including hydrogen storage. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Physics D: Applied Physics
volume
43
issue
37
publisher
IOP Publishing
external identifiers
  • wos:000281544100011
  • scopus:78249279640
ISSN
1361-6463
DOI
10.1088/0022-3727/43/37/374010
language
English
LU publication?
yes
id
50f582e1-9cae-4bfa-91b2-cb6f0ad585e5 (old id 1697640)
date added to LUP
2010-10-22 16:25:07
date last changed
2018-07-15 03:48:51
@article{50f582e1-9cae-4bfa-91b2-cb6f0ad585e5,
  abstract     = {In this paper we discuss and review results of recent studies of epitaxial growth of graphene on silicon carbide. The presentation is focused on high quality, large and uniform layer graphene growth on the SiC(0 0 0 1) surface and the results of using different growth techniques and parameters are compared. This is an important subject because access to high-quality graphene sheets on a suitable substrate plays a crucial role for future electronics applications involving patterning. Different techniques used to characterize the graphene grown are summarized. We moreover show that atomic hydrogen exposures can convert a monolayer graphene sample on SiC(0 0 0 1) to bi-layer graphene without the carbon buffer layer. Thus, a new process to prepare large, homogeneous stable bi-layer graphene sheets on SiC(0 0 0 1) is presented. The process is shown to be reversible and should be very attractive for various applications, including hydrogen storage.},
  author       = {Virojanadara, C. and Yakimova, R. and Zakharov, Alexei and Johansson, L. I.},
  issn         = {1361-6463},
  language     = {eng},
  number       = {37},
  publisher    = {IOP Publishing},
  series       = {Journal of Physics D: Applied Physics},
  title        = {Large homogeneous mono-/bi-layer graphene on 6H-SiC(0001) and buffer layer elimination},
  url          = {http://dx.doi.org/10.1088/0022-3727/43/37/374010},
  volume       = {43},
  year         = {2010},
}