Realizing Lateral Wrap-Gated Nanowire FETs: Controlling Gate Length with Chemistry Rather than Lithography.
(2012) In Nano Letters 12(1). p.1-6- Abstract
- An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling but has only been realized for vertically oriented nanowire transistors. We report a method for producing laterally oriented wrap-gated nanowire field-effect transistors that provides exquisite control over the gate length via a single wet etch step, eliminating the need for additional lithography beyond that required to define the source/drain contacts and gate lead. It allows the contacts and nanowire segments extending beyond the wrap-gate to be controlled independently by biasing the doped substrate, significantly improving the... (More)
- An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling but has only been realized for vertically oriented nanowire transistors. We report a method for producing laterally oriented wrap-gated nanowire field-effect transistors that provides exquisite control over the gate length via a single wet etch step, eliminating the need for additional lithography beyond that required to define the source/drain contacts and gate lead. It allows the contacts and nanowire segments extending beyond the wrap-gate to be controlled independently by biasing the doped substrate, significantly improving the subthreshold electrical characteristics. Our devices provide stronger, more symmetric gating of the nanowire, operate at temperatures between 300 and 4 K, and offer new opportunities in applications ranging from studies of one-dimensional quantum transport through to chemical and biological sensing. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1831826
- author
- Storm, Kristian LU ; Nylund, Gustav LU ; Samuelson, Lars LU and Micolich, Adam P
- organization
- publishing date
- 2012
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nano Letters
- volume
- 12
- issue
- 1
- pages
- 1 - 6
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000298943100001
- pmid:21322605
- scopus:84855814477
- pmid:21322605
- ISSN
- 1530-6992
- DOI
- 10.1021/nl104403g
- language
- English
- LU publication?
- yes
- id
- eb3bebc6-dee8-4b88-9040-35923f560ee2 (old id 1831826)
- date added to LUP
- 2016-04-01 13:43:11
- date last changed
- 2023-11-12 20:42:43
@article{eb3bebc6-dee8-4b88-9040-35923f560ee2,
abstract = {{An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling but has only been realized for vertically oriented nanowire transistors. We report a method for producing laterally oriented wrap-gated nanowire field-effect transistors that provides exquisite control over the gate length via a single wet etch step, eliminating the need for additional lithography beyond that required to define the source/drain contacts and gate lead. It allows the contacts and nanowire segments extending beyond the wrap-gate to be controlled independently by biasing the doped substrate, significantly improving the subthreshold electrical characteristics. Our devices provide stronger, more symmetric gating of the nanowire, operate at temperatures between 300 and 4 K, and offer new opportunities in applications ranging from studies of one-dimensional quantum transport through to chemical and biological sensing.}},
author = {{Storm, Kristian and Nylund, Gustav and Samuelson, Lars and Micolich, Adam P}},
issn = {{1530-6992}},
language = {{eng}},
number = {{1}},
pages = {{1--6}},
publisher = {{The American Chemical Society (ACS)}},
series = {{Nano Letters}},
title = {{Realizing Lateral Wrap-Gated Nanowire FETs: Controlling Gate Length with Chemistry Rather than Lithography.}},
url = {{http://dx.doi.org/10.1021/nl104403g}},
doi = {{10.1021/nl104403g}},
volume = {{12}},
year = {{2012}},
}