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Gate-Induced Fermi Level Tuning in InP Nanowires at Efficiency Close to the Thermal Limit.

Storm, Kristian LU ; Nylund, Gustav LU ; Borgström, Magnus LU ; Wallentin, Jesper LU ; Fasth, Carina LU ; Thelander, Claes LU and Samuelson, Lars LU (2011) In Nano Letters 11. p.1127-1130
Abstract
As downscaling of semiconductor devices continues, one or a few randomly placed dopants may dominate the characteristics. Furthermore, due to the large surface-to-volume ratio of one-dimensional devices, the position of the Fermi level is often determined primarily by surface pinning, regardless of doping level. In this work, we investigate the possibility of tuning the Fermi level dynamically with wrap-around gates, instead of statically setting it using the impurity concentration. This is done using Ω-gated metal-oxide-semiconductor field-effect transistors with HfO(2)-capped InP nanowires as channel material. It is found that induced n-type devices exhibit an optimal inverse subthreshold slope of 68 mV/decade. By adjusting the growth... (More)
As downscaling of semiconductor devices continues, one or a few randomly placed dopants may dominate the characteristics. Furthermore, due to the large surface-to-volume ratio of one-dimensional devices, the position of the Fermi level is often determined primarily by surface pinning, regardless of doping level. In this work, we investigate the possibility of tuning the Fermi level dynamically with wrap-around gates, instead of statically setting it using the impurity concentration. This is done using Ω-gated metal-oxide-semiconductor field-effect transistors with HfO(2)-capped InP nanowires as channel material. It is found that induced n-type devices exhibit an optimal inverse subthreshold slope of 68 mV/decade. By adjusting the growth and process parameters, it is possible to produce ambipolar devices, in which the Fermi level can be tuned across the entire band gap, making it possible to induce both n-type and p-type conduction. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
11
pages
1127 - 1130
publisher
The American Chemical Society
external identifiers
  • wos:000288061500037
  • pmid:21306112
  • scopus:79952612982
ISSN
1530-6992
DOI
10.1021/nl104032s
language
English
LU publication?
yes
id
50e1706a-b632-4983-920b-b2ef21aae6ca (old id 1832092)
date added to LUP
2011-03-30 14:12:00
date last changed
2017-08-20 04:00:26
@article{50e1706a-b632-4983-920b-b2ef21aae6ca,
  abstract     = {As downscaling of semiconductor devices continues, one or a few randomly placed dopants may dominate the characteristics. Furthermore, due to the large surface-to-volume ratio of one-dimensional devices, the position of the Fermi level is often determined primarily by surface pinning, regardless of doping level. In this work, we investigate the possibility of tuning the Fermi level dynamically with wrap-around gates, instead of statically setting it using the impurity concentration. This is done using Ω-gated metal-oxide-semiconductor field-effect transistors with HfO(2)-capped InP nanowires as channel material. It is found that induced n-type devices exhibit an optimal inverse subthreshold slope of 68 mV/decade. By adjusting the growth and process parameters, it is possible to produce ambipolar devices, in which the Fermi level can be tuned across the entire band gap, making it possible to induce both n-type and p-type conduction.},
  author       = {Storm, Kristian and Nylund, Gustav and Borgström, Magnus and Wallentin, Jesper and Fasth, Carina and Thelander, Claes and Samuelson, Lars},
  issn         = {1530-6992},
  language     = {eng},
  pages        = {1127--1130},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Gate-Induced Fermi Level Tuning in InP Nanowires at Efficiency Close to the Thermal Limit.},
  url          = {http://dx.doi.org/10.1021/nl104032s},
  volume       = {11},
  year         = {2011},
}