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Correlated development of a (2 x 2) reconstruction and a charge accumulation layer on the InAs(111)-Bi surface

Szamota-Leandersson, Karolina; Leandersson, Mats LU ; Gothelid, Mats and Karlsson, Ulf O. (2011) In Surface Science 605(1-2). p.12-17
Abstract
We have studied the formation of a Bi-induced (2 x 2) reconstruction on the InAs(111)B surface. In connection to the development of the (2 x 2) reconstruction, a two dimensional charge accumulation layer located at the bottom of the InAs conduction band appears as seen through a photoemission structure at the Fermi level. Not well ordered Bi layers do not induce a charge accumulation. The Bi-induced reconstruction reduces the polarization of the pristine surface and changes the initial charge distribution. InAsBi alloying occurs below the surface where Bi acts as charge donor leading to the charge accumulation layer. (C) 2010 Elsevier B.V. All rights reserved.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Adatoms, Indium arsenide, Bismuth, Photoemission, 2 DEG
in
Surface Science
volume
605
issue
1-2
pages
12 - 17
publisher
Elsevier
external identifiers
  • wos:000286021000003
  • scopus:78649703757
ISSN
0039-6028
DOI
10.1016/j.susc.2010.09.015
language
English
LU publication?
yes
id
3ff719eb-75a0-4aef-aaa4-825aff53de54 (old id 1868819)
date added to LUP
2011-04-19 11:17:47
date last changed
2017-01-01 06:27:47
@article{3ff719eb-75a0-4aef-aaa4-825aff53de54,
  abstract     = {We have studied the formation of a Bi-induced (2 x 2) reconstruction on the InAs(111)B surface. In connection to the development of the (2 x 2) reconstruction, a two dimensional charge accumulation layer located at the bottom of the InAs conduction band appears as seen through a photoemission structure at the Fermi level. Not well ordered Bi layers do not induce a charge accumulation. The Bi-induced reconstruction reduces the polarization of the pristine surface and changes the initial charge distribution. InAsBi alloying occurs below the surface where Bi acts as charge donor leading to the charge accumulation layer. (C) 2010 Elsevier B.V. All rights reserved.},
  author       = {Szamota-Leandersson, Karolina and Leandersson, Mats and Gothelid, Mats and Karlsson, Ulf O.},
  issn         = {0039-6028},
  keyword      = {Adatoms,Indium arsenide,Bismuth,Photoemission,2 DEG},
  language     = {eng},
  number       = {1-2},
  pages        = {12--17},
  publisher    = {Elsevier},
  series       = {Surface Science},
  title        = {Correlated development of a (2 x 2) reconstruction and a charge accumulation layer on the InAs(111)-Bi surface},
  url          = {http://dx.doi.org/10.1016/j.susc.2010.09.015},
  volume       = {605},
  year         = {2011},
}