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Diffusion length measurements in axial and radial heterostructured nanowires using cathodoluminescence

Bolinsson, Jessica LU ; Mergenthaler, Kilian LU ; Samuelson, Lars LU and Gustafsson, Anders LU (2011) 15th international conference on metal organic vapor phase epitaxy, 2010 In Journal of Crystal Growth 315(1). p.138-142
Abstract
We have measured the ambipolar diffusion lengths in nanowires with GaAs and AlGaAs core material using cathodoluminescence imaging. This was done by combining III-V semiconductor materials with different bandgaps in single nanowires. We show that it is possible to record intensity profiles of the emission from segments of lower bandgap material positioned along the nanowire length and in this way gain an insight on important carrier transport properties of the nanowire core material. We present diffusion data for GaAs and AlGaAs nanowire core material in different radially and axially heterostructured nanowires and show that the diffusion of carriers is greatly increased by capping the nanowires with a higher-bandgap material. In addition,... (More)
We have measured the ambipolar diffusion lengths in nanowires with GaAs and AlGaAs core material using cathodoluminescence imaging. This was done by combining III-V semiconductor materials with different bandgaps in single nanowires. We show that it is possible to record intensity profiles of the emission from segments of lower bandgap material positioned along the nanowire length and in this way gain an insight on important carrier transport properties of the nanowire core material. We present diffusion data for GaAs and AlGaAs nanowire core material in different radially and axially heterostructured nanowires and show that the diffusion of carriers is greatly increased by capping the nanowires with a higher-bandgap material. In addition, we show how a decoupling of the radial and axial growth during particle-seeded growth is necessary in order to reach long diffusion lengths along the core of axially heterostructured nanowires. In addition, for ternary compounds (InGaAs and AlGaAs), we observe compositional differences for radial and axial nanowire growth. (C) 2010 Elsevier B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Characterization, Diffusion, Nanostructures, Metalorganic vapor phase, epitaxy, Nanomaterials, Semiconducting III-IV materials
in
Journal of Crystal Growth
volume
315
issue
1
pages
138 - 142
publisher
Elsevier
conference name
15th international conference on metal organic vapor phase epitaxy, 2010
external identifiers
  • wos:000287558400031
  • scopus:79551688425
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2010.08.054
language
English
LU publication?
yes
id
437e4cf2-9180-444c-9494-3b73bcaf3fad (old id 1872775)
date added to LUP
2011-04-26 11:02:16
date last changed
2017-02-26 03:43:15
@inproceedings{437e4cf2-9180-444c-9494-3b73bcaf3fad,
  abstract     = {We have measured the ambipolar diffusion lengths in nanowires with GaAs and AlGaAs core material using cathodoluminescence imaging. This was done by combining III-V semiconductor materials with different bandgaps in single nanowires. We show that it is possible to record intensity profiles of the emission from segments of lower bandgap material positioned along the nanowire length and in this way gain an insight on important carrier transport properties of the nanowire core material. We present diffusion data for GaAs and AlGaAs nanowire core material in different radially and axially heterostructured nanowires and show that the diffusion of carriers is greatly increased by capping the nanowires with a higher-bandgap material. In addition, we show how a decoupling of the radial and axial growth during particle-seeded growth is necessary in order to reach long diffusion lengths along the core of axially heterostructured nanowires. In addition, for ternary compounds (InGaAs and AlGaAs), we observe compositional differences for radial and axial nanowire growth. (C) 2010 Elsevier B.V. All rights reserved.},
  author       = {Bolinsson, Jessica and Mergenthaler, Kilian and Samuelson, Lars and Gustafsson, Anders},
  booktitle    = {Journal of Crystal Growth},
  issn         = {0022-0248},
  keyword      = {Characterization,Diffusion,Nanostructures,Metalorganic vapor phase,epitaxy,Nanomaterials,Semiconducting III-IV materials},
  language     = {eng},
  number       = {1},
  pages        = {138--142},
  publisher    = {Elsevier},
  title        = {Diffusion length measurements in axial and radial heterostructured nanowires using cathodoluminescence},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2010.08.054},
  volume       = {315},
  year         = {2011},
}