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Memristive and Memcapacitive Characteristics of a Au/Ti-HfO2-InP/InGaAs Diode

Sun, Jie LU ; Lind, Erik LU ; Maximov, Ivan LU and Xu, Hongqi LU (2011) In IEEE Electron Device Letters 32(2). p.131-133
Abstract
This letter reports on room-temperature electrical measurements of a Au/Ti-HfO2-InP/InGaAs diode fabricated by atomic layer deposition and electron beam lithography. At forward bias voltages, the diode shows memristor characteristics, whereas at reverse bias voltages, the diode can be characterized as a memcapacitor. A parasitic accumulation layer of charges formed at the high-kappa oxide/InP interface is shown to be the cause for the phenomena. The operation of the diode as a rewritable memory cell is also demonstrated. The results highlight novel memristive and memcapacitive properties of high-kappa dielectrics on III-V semiconductors and their potential applications in nanoelectronics.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
High-kappa HfO2, InP/InGaAs, memcapacitors, memristors, nanoelectronics
in
IEEE Electron Device Letters
volume
32
issue
2
pages
131 - 133
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000286677700007
  • scopus:79151486395
ISSN
0741-3106
DOI
10.1109/LED.2010.2090334
language
English
LU publication?
yes
id
1dc1df12-cf6e-4508-a19c-ace6432ce513 (old id 1872867)
date added to LUP
2011-04-18 11:11:06
date last changed
2017-10-22 04:06:09
@article{1dc1df12-cf6e-4508-a19c-ace6432ce513,
  abstract     = {This letter reports on room-temperature electrical measurements of a Au/Ti-HfO2-InP/InGaAs diode fabricated by atomic layer deposition and electron beam lithography. At forward bias voltages, the diode shows memristor characteristics, whereas at reverse bias voltages, the diode can be characterized as a memcapacitor. A parasitic accumulation layer of charges formed at the high-kappa oxide/InP interface is shown to be the cause for the phenomena. The operation of the diode as a rewritable memory cell is also demonstrated. The results highlight novel memristive and memcapacitive properties of high-kappa dielectrics on III-V semiconductors and their potential applications in nanoelectronics.},
  author       = {Sun, Jie and Lind, Erik and Maximov, Ivan and Xu, Hongqi},
  issn         = {0741-3106},
  keyword      = {High-kappa HfO2,InP/InGaAs,memcapacitors,memristors,nanoelectronics},
  language     = {eng},
  number       = {2},
  pages        = {131--133},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Electron Device Letters},
  title        = {Memristive and Memcapacitive Characteristics of a Au/Ti-HfO2-InP/InGaAs Diode},
  url          = {http://dx.doi.org/10.1109/LED.2010.2090334},
  volume       = {32},
  year         = {2011},
}