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Scanning gate imaging of quantum dots in 1D ultra-thin InAs/InP nanowires

Boyd, Erin E.; Storm, Kristian LU ; Samuelson, Lars LU and Westervelt, Robert M. (2011) In Nanotechnology 22(18).
Abstract
We use a scanning gate microscope (SGM) to characterize one-dimensional ultra-thin (diameter approximate to 30 nm) InAs/InP heterostructure nanowires containing a nominally 300 nm long InAs quantum dot defined by two InP tunnel barriers. Measurements of Coulomb blockade conductance versus backgate voltage with no tip present are difficult to decipher. Using the SGM tip as a charged movable gate, we are able to identify three quantum dots along the nanowire: the grown-in quantum dot and an additional quantum dot near each metal lead. The SGM conductance images are used to disentangle information about individual quantum dots and then to characterize each quantum dot using spatially resolved energy-level spectroscopy. S Online supplementary... (More)
We use a scanning gate microscope (SGM) to characterize one-dimensional ultra-thin (diameter approximate to 30 nm) InAs/InP heterostructure nanowires containing a nominally 300 nm long InAs quantum dot defined by two InP tunnel barriers. Measurements of Coulomb blockade conductance versus backgate voltage with no tip present are difficult to decipher. Using the SGM tip as a charged movable gate, we are able to identify three quantum dots along the nanowire: the grown-in quantum dot and an additional quantum dot near each metal lead. The SGM conductance images are used to disentangle information about individual quantum dots and then to characterize each quantum dot using spatially resolved energy-level spectroscopy. S Online supplementary data available from stacks.iop.org/Nano/22/185201/mmedia (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
22
issue
18
publisher
IOP Publishing
external identifiers
  • wos:000288653300002
  • scopus:79953270296
ISSN
0957-4484
DOI
10.1088/0957-4484/22/18/185201
language
English
LU publication?
yes
id
91051872-eb47-4e53-9314-4c63ae271d30 (old id 1925789)
date added to LUP
2011-05-11 08:06:28
date last changed
2017-10-08 03:11:46
@article{91051872-eb47-4e53-9314-4c63ae271d30,
  abstract     = {We use a scanning gate microscope (SGM) to characterize one-dimensional ultra-thin (diameter approximate to 30 nm) InAs/InP heterostructure nanowires containing a nominally 300 nm long InAs quantum dot defined by two InP tunnel barriers. Measurements of Coulomb blockade conductance versus backgate voltage with no tip present are difficult to decipher. Using the SGM tip as a charged movable gate, we are able to identify three quantum dots along the nanowire: the grown-in quantum dot and an additional quantum dot near each metal lead. The SGM conductance images are used to disentangle information about individual quantum dots and then to characterize each quantum dot using spatially resolved energy-level spectroscopy. S Online supplementary data available from stacks.iop.org/Nano/22/185201/mmedia},
  articleno    = {185201},
  author       = {Boyd, Erin E. and Storm, Kristian and Samuelson, Lars and Westervelt, Robert M.},
  issn         = {0957-4484},
  language     = {eng},
  number       = {18},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Scanning gate imaging of quantum dots in 1D ultra-thin InAs/InP nanowires},
  url          = {http://dx.doi.org/10.1088/0957-4484/22/18/185201},
  volume       = {22},
  year         = {2011},
}