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A General Approach for Sharp Crystal Phase Switching in InAs, GaAs, InP, and GaP Nanowires Using Only Group V Flow.

Lehmann, Sebastian LU ; Wallentin, Jesper LU ; Jacobsson, Daniel LU ; Deppert, Knut LU orcid and Dick Thelander, Kimberly LU (2013) In Nano Letters 13(9). p.4099-4105
Abstract
III-V-based nanowires usually exhibit random mixtures of wurtzite (WZ) and zinc blende (ZB) crystal structure, and pure crystal phase wires represent the exception rather than the rule. In this work, the effective group V hydride flow was the only growth parameter which was changed during MOVPE growth to promote transitions from WZ to ZB and from ZB to WZ. Our technique works in the same way for all investigated III-Vs (GaP, GaAs, InP, and InAs), with low group V flow for WZ and high group V flow for ZB conditions. This strongly suggests a common underlying mechanism. It displays to our best knowledge the simplest changes of the growth condition to control the nanowire crystal structure. The inherent reduction of growth variables is a... (More)
III-V-based nanowires usually exhibit random mixtures of wurtzite (WZ) and zinc blende (ZB) crystal structure, and pure crystal phase wires represent the exception rather than the rule. In this work, the effective group V hydride flow was the only growth parameter which was changed during MOVPE growth to promote transitions from WZ to ZB and from ZB to WZ. Our technique works in the same way for all investigated III-Vs (GaP, GaAs, InP, and InAs), with low group V flow for WZ and high group V flow for ZB conditions. This strongly suggests a common underlying mechanism. It displays to our best knowledge the simplest changes of the growth condition to control the nanowire crystal structure. The inherent reduction of growth variables is a crucial requirement for the interpretation in the frame of existing understanding of polytypism in III-V nanowires. We show that the change in surface energetics of the vapor-liquid-solid system at the vapor-liquid and liquid-solid interface is likely to control the crystal structure in our nanowires. (Less)
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
13
issue
9
pages
4099 - 4105
publisher
The American Chemical Society (ACS)
external identifiers
  • wos:000330158900021
  • pmid:23902379
  • scopus:84884218811
  • pmid:23902379
ISSN
1530-6992
DOI
10.1021/nl401554w
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
id
1937433e-2e5b-4b59-9a7c-3991a0bbb7e1 (old id 4006359)
date added to LUP
2016-04-01 10:01:32
date last changed
2023-11-09 09:46:08
@article{1937433e-2e5b-4b59-9a7c-3991a0bbb7e1,
  abstract     = {{III-V-based nanowires usually exhibit random mixtures of wurtzite (WZ) and zinc blende (ZB) crystal structure, and pure crystal phase wires represent the exception rather than the rule. In this work, the effective group V hydride flow was the only growth parameter which was changed during MOVPE growth to promote transitions from WZ to ZB and from ZB to WZ. Our technique works in the same way for all investigated III-Vs (GaP, GaAs, InP, and InAs), with low group V flow for WZ and high group V flow for ZB conditions. This strongly suggests a common underlying mechanism. It displays to our best knowledge the simplest changes of the growth condition to control the nanowire crystal structure. The inherent reduction of growth variables is a crucial requirement for the interpretation in the frame of existing understanding of polytypism in III-V nanowires. We show that the change in surface energetics of the vapor-liquid-solid system at the vapor-liquid and liquid-solid interface is likely to control the crystal structure in our nanowires.}},
  author       = {{Lehmann, Sebastian and Wallentin, Jesper and Jacobsson, Daniel and Deppert, Knut and Dick Thelander, Kimberly}},
  issn         = {{1530-6992}},
  language     = {{eng}},
  number       = {{9}},
  pages        = {{4099--4105}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Nano Letters}},
  title        = {{A General Approach for Sharp Crystal Phase Switching in InAs, GaAs, InP, and GaP Nanowires Using Only Group V Flow.}},
  url          = {{http://dx.doi.org/10.1021/nl401554w}},
  doi          = {{10.1021/nl401554w}},
  volume       = {{13}},
  year         = {{2013}},
}