Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Magnetic properties of MnSb inclusions formed in GaSb matrix directly during molecular beam epitaxial growth

Lawniczak-Jablonska, Krystyna ; Wolska, Anna ; Klepka, Marcin T. ; Kret, Slawomir ; Gosk, Jacek ; Twardowski, Andrzej ; Wasik, Dariusz ; Kwiatkowski, Adam ; Kurowska, Boguslawa and Kowalski, Bogdan J. , et al. (2011) In Applied Physics Reviews 109(7).
Abstract
Despite of intensive search for the proper semiconductor base materials for spintronic devices working at room temperature no appropriate material based on ferromagnetic semiconductors has been found so far. We demonstrate that the phase segregated system with MnSb hexagonal inclusions inside the GaSb matrix, formed directly during the molecular beam epitaxial growth reveals the ferromagnetic properties at room temperature and is a good candidate for exploitation in spintronics. Furthermore, the MnSb inclusions with only one crystalline structure were identified in this GaMn:MnSb granular material. The SQUID magnetometry confirmed that this material exhibits ferromagnetic like behavior starting from helium up to room temperature. Moreover,... (More)
Despite of intensive search for the proper semiconductor base materials for spintronic devices working at room temperature no appropriate material based on ferromagnetic semiconductors has been found so far. We demonstrate that the phase segregated system with MnSb hexagonal inclusions inside the GaSb matrix, formed directly during the molecular beam epitaxial growth reveals the ferromagnetic properties at room temperature and is a good candidate for exploitation in spintronics. Furthermore, the MnSb inclusions with only one crystalline structure were identified in this GaMn:MnSb granular material. The SQUID magnetometry confirmed that this material exhibits ferromagnetic like behavior starting from helium up to room temperature. Moreover, the magnetic anisotropy was found which was present also at room temperature, and it was proved that by choosing a proper substrate it is possible to control the direction of easy axis of inclusions' magnetization moment between in-plane and out-of-plane; the latter is important in view of potential applications in spintronic devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3562171] (Less)
Please use this url to cite or link to this publication:
author
; ; ; ; ; ; ; ; and , et al. (More)
; ; ; ; ; ; ; ; ; and (Less)
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Reviews
volume
109
issue
7
article number
074308
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000289949000118
  • scopus:79955398514
ISSN
1931-9401
DOI
10.1063/1.3562171
language
English
LU publication?
yes
id
3345e357-2d80-46a0-b18e-d13ae440c645 (old id 1964333)
date added to LUP
2016-04-01 10:12:25
date last changed
2021-10-06 03:07:37
@article{3345e357-2d80-46a0-b18e-d13ae440c645,
  abstract     = {Despite of intensive search for the proper semiconductor base materials for spintronic devices working at room temperature no appropriate material based on ferromagnetic semiconductors has been found so far. We demonstrate that the phase segregated system with MnSb hexagonal inclusions inside the GaSb matrix, formed directly during the molecular beam epitaxial growth reveals the ferromagnetic properties at room temperature and is a good candidate for exploitation in spintronics. Furthermore, the MnSb inclusions with only one crystalline structure were identified in this GaMn:MnSb granular material. The SQUID magnetometry confirmed that this material exhibits ferromagnetic like behavior starting from helium up to room temperature. Moreover, the magnetic anisotropy was found which was present also at room temperature, and it was proved that by choosing a proper substrate it is possible to control the direction of easy axis of inclusions' magnetization moment between in-plane and out-of-plane; the latter is important in view of potential applications in spintronic devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3562171]},
  author       = {Lawniczak-Jablonska, Krystyna and Wolska, Anna and Klepka, Marcin T. and Kret, Slawomir and Gosk, Jacek and Twardowski, Andrzej and Wasik, Dariusz and Kwiatkowski, Adam and Kurowska, Boguslawa and Kowalski, Bogdan J. and Sadowski, Janusz},
  issn         = {1931-9401},
  language     = {eng},
  number       = {7},
  publisher    = {American Institute of Physics (AIP)},
  series       = {Applied Physics Reviews},
  title        = {Magnetic properties of MnSb inclusions formed in GaSb matrix directly during molecular beam epitaxial growth},
  url          = {http://dx.doi.org/10.1063/1.3562171},
  doi          = {10.1063/1.3562171},
  volume       = {109},
  year         = {2011},
}