Effects of crystal phase mixing on the electrical properties of InAs nanowires
(2011) In Nano Letters 11(April 29, 2011). p.2424-2429- Abstract
- We report a systematic study of the relationship between crystal quality and electrical properties of InAs nanowires grown by MOVPE and MBE, with crystal structure varying from wurtzite to zinc blende. We find that mixtures of these phases can exhibit up to 2 orders of magnitude higher resistivity than single-phase nanowires, with a temperature-activated transport mechanism. However, it is also found that defects in the form of stacking faults and twin planes do not significantly affect the resistivity. These findings are important for nanowire-based devices, where uncontrolled formation of particular polytype mixtures may lead to unacceptable device variability.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1973375
- author
- Thelander, Claes LU ; Caroff, Philippe LU ; Plissard, Sébastien ; Dey, Anil LU and Dick Thelander, Kimberly LU
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nano Letters
- volume
- 11
- issue
- April 29, 2011
- pages
- 2424 - 2429
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000291322600040
- pmid:21528899
- scopus:79958799684
- pmid:21528899
- ISSN
- 1530-6992
- DOI
- 10.1021/nl2008339
- language
- English
- LU publication?
- yes
- id
- 56870144-6120-43d0-8d26-4fdf54a0c567 (old id 1973375)
- date added to LUP
- 2016-04-01 13:14:39
- date last changed
- 2023-11-12 14:11:21
@article{56870144-6120-43d0-8d26-4fdf54a0c567, abstract = {{We report a systematic study of the relationship between crystal quality and electrical properties of InAs nanowires grown by MOVPE and MBE, with crystal structure varying from wurtzite to zinc blende. We find that mixtures of these phases can exhibit up to 2 orders of magnitude higher resistivity than single-phase nanowires, with a temperature-activated transport mechanism. However, it is also found that defects in the form of stacking faults and twin planes do not significantly affect the resistivity. These findings are important for nanowire-based devices, where uncontrolled formation of particular polytype mixtures may lead to unacceptable device variability.}}, author = {{Thelander, Claes and Caroff, Philippe and Plissard, Sébastien and Dey, Anil and Dick Thelander, Kimberly}}, issn = {{1530-6992}}, language = {{eng}}, number = {{April 29, 2011}}, pages = {{2424--2429}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{Effects of crystal phase mixing on the electrical properties of InAs nanowires}}, url = {{http://dx.doi.org/10.1021/nl2008339}}, doi = {{10.1021/nl2008339}}, volume = {{11}}, year = {{2011}}, }