Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Effects of crystal phase mixing on the electrical properties of InAs nanowires

Thelander, Claes LU ; Caroff, Philippe LU ; Plissard, Sébastien ; Dey, Anil LU and Dick Thelander, Kimberly LU (2011) In Nano Letters 11(April 29, 2011). p.2424-2429
Abstract
We report a systematic study of the relationship between crystal quality and electrical properties of InAs nanowires grown by MOVPE and MBE, with crystal structure varying from wurtzite to zinc blende. We find that mixtures of these phases can exhibit up to 2 orders of magnitude higher resistivity than single-phase nanowires, with a temperature-activated transport mechanism. However, it is also found that defects in the form of stacking faults and twin planes do not significantly affect the resistivity. These findings are important for nanowire-based devices, where uncontrolled formation of particular polytype mixtures may lead to unacceptable device variability.
Please use this url to cite or link to this publication:
author
; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
11
issue
April 29, 2011
pages
2424 - 2429
publisher
The American Chemical Society (ACS)
external identifiers
  • wos:000291322600040
  • pmid:21528899
  • scopus:79958799684
  • pmid:21528899
ISSN
1530-6992
DOI
10.1021/nl2008339
language
English
LU publication?
yes
id
56870144-6120-43d0-8d26-4fdf54a0c567 (old id 1973375)
date added to LUP
2016-04-01 13:14:39
date last changed
2021-10-03 04:45:01
@article{56870144-6120-43d0-8d26-4fdf54a0c567,
  abstract     = {We report a systematic study of the relationship between crystal quality and electrical properties of InAs nanowires grown by MOVPE and MBE, with crystal structure varying from wurtzite to zinc blende. We find that mixtures of these phases can exhibit up to 2 orders of magnitude higher resistivity than single-phase nanowires, with a temperature-activated transport mechanism. However, it is also found that defects in the form of stacking faults and twin planes do not significantly affect the resistivity. These findings are important for nanowire-based devices, where uncontrolled formation of particular polytype mixtures may lead to unacceptable device variability.},
  author       = {Thelander, Claes and Caroff, Philippe and Plissard, Sébastien and Dey, Anil and Dick Thelander, Kimberly},
  issn         = {1530-6992},
  language     = {eng},
  number       = {April 29, 2011},
  pages        = {2424--2429},
  publisher    = {The American Chemical Society (ACS)},
  series       = {Nano Letters},
  title        = {Effects of crystal phase mixing on the electrical properties of InAs nanowires},
  url          = {http://dx.doi.org/10.1021/nl2008339},
  doi          = {10.1021/nl2008339},
  volume       = {11},
  year         = {2011},
}