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Photoreflectance study of the fundamental optical properties of (Ga,Mn) As epitaxial films

Yastrubchak, O.; Zuk, J.; Krzyzanowska, H.; Domagala, J. Z.; Andrearczyk, T.; Sadowski, Janusz LU and Wosinski, T. (2011) In Physical Review B (Condensed Matter and Materials Physics) 83(24).
Abstract
Fundamental optical properties of thin films of the (Ga,Mn) As diluted ferromagnetic semiconductor with low (1%-2%) and high (4%-6%) Mn content and of a reference GaAs film, grown by low-temperature molecular-beam epitaxy, have been investigated by photoreflectance (PR) spectroscopy. In addition, the films were subjected to complementary characterization by means of superconducting quantum interference device magnetometry, Raman spectroscopy, and high-resolution x-ray diffractometry. Thorough full-line-shape analysis of the PR spectra, which enabled determination of the E-0 electronic transition in (Ga,Mn) As, revealed significant differences between the energy band structures in the vicinity of the Gamma point of the Brillouin zone in the... (More)
Fundamental optical properties of thin films of the (Ga,Mn) As diluted ferromagnetic semiconductor with low (1%-2%) and high (4%-6%) Mn content and of a reference GaAs film, grown by low-temperature molecular-beam epitaxy, have been investigated by photoreflectance (PR) spectroscopy. In addition, the films were subjected to complementary characterization by means of superconducting quantum interference device magnetometry, Raman spectroscopy, and high-resolution x-ray diffractometry. Thorough full-line-shape analysis of the PR spectra, which enabled determination of the E-0 electronic transition in (Ga,Mn) As, revealed significant differences between the energy band structures in the vicinity of the Gamma point of the Brillouin zone in the investigated (Ga,Mn) As films. In view of the experimental results obtained, the evolution of the valence band structure in (Ga,Mn) As with increasing Mn content is discussed, pointing to a merging of the Mn-related impurity band with the host GaAs valence band for high Mn content. (Less)
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author
organization
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type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
83
issue
24
publisher
American Physical Society
external identifiers
  • wos:000291352200001
  • scopus:79961220444
ISSN
1098-0121
DOI
10.1103/PhysRevB.83.245201
language
English
LU publication?
yes
id
2cad6a46-f23c-41d0-a90a-c238b26c47ae (old id 1985212)
date added to LUP
2011-07-06 15:10:33
date last changed
2017-01-01 05:52:01
@article{2cad6a46-f23c-41d0-a90a-c238b26c47ae,
  abstract     = {Fundamental optical properties of thin films of the (Ga,Mn) As diluted ferromagnetic semiconductor with low (1%-2%) and high (4%-6%) Mn content and of a reference GaAs film, grown by low-temperature molecular-beam epitaxy, have been investigated by photoreflectance (PR) spectroscopy. In addition, the films were subjected to complementary characterization by means of superconducting quantum interference device magnetometry, Raman spectroscopy, and high-resolution x-ray diffractometry. Thorough full-line-shape analysis of the PR spectra, which enabled determination of the E-0 electronic transition in (Ga,Mn) As, revealed significant differences between the energy band structures in the vicinity of the Gamma point of the Brillouin zone in the investigated (Ga,Mn) As films. In view of the experimental results obtained, the evolution of the valence band structure in (Ga,Mn) As with increasing Mn content is discussed, pointing to a merging of the Mn-related impurity band with the host GaAs valence band for high Mn content.},
  author       = {Yastrubchak, O. and Zuk, J. and Krzyzanowska, H. and Domagala, J. Z. and Andrearczyk, T. and Sadowski, Janusz and Wosinski, T.},
  issn         = {1098-0121},
  language     = {eng},
  number       = {24},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Photoreflectance study of the fundamental optical properties of (Ga,Mn) As epitaxial films},
  url          = {http://dx.doi.org/10.1103/PhysRevB.83.245201},
  volume       = {83},
  year         = {2011},
}