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Different Doping Behaviors of Silicon in Zinc Blende and Wurtzite GaAs Nanowires : Implications for Crystal-Phase Device Design

Hou, Qichao ; Fonseka, H. Aruni ; Martelli, Faustino ; Paci, Barbara ; Gustafsson, Anders LU orcid ; Gott, James A. ; Yang, Hui ; Huo, Suguo ; Yu, Xuezhe and Chen, Lulu , et al. (2023) In ACS Applied Nano Materials 6(13). p.11465-11471
Abstract

Crystal-phase engineering between zinc blende (ZB) and wurtzite (WZ) structures is becoming an important method in designing unique optoelectronic and electronic semiconductor devices. Doping to engineer their electric properties is thus of critical importance, but a direct experimental comparison in doping these two crystal structures is still missing. Nanowires (NWs) allow the coexistence of both structures due to their special growth mode. The differences in dopant incorporation between the two phases are studied here in GaAs NW shells that are coherently grown around the NWs, hence maintaining the crystal structure of the core. The Si dopant is observed to have a higher incorporation efficiency into the WZ structure due to a 2 times... (More)

Crystal-phase engineering between zinc blende (ZB) and wurtzite (WZ) structures is becoming an important method in designing unique optoelectronic and electronic semiconductor devices. Doping to engineer their electric properties is thus of critical importance, but a direct experimental comparison in doping these two crystal structures is still missing. Nanowires (NWs) allow the coexistence of both structures due to their special growth mode. The differences in dopant incorporation between the two phases are studied here in GaAs NW shells that are coherently grown around the NWs, hence maintaining the crystal structure of the core. The Si dopant is observed to have a higher incorporation efficiency into the WZ structure due to a 2 times lower incorporation energy compared with that of the ZB structure. Besides, it can also be predicted that Si is more inclined toward Ga sites in both structures. Indeed, the As-site doping energy of the WZ structure is several orders of magnitude higher than that of Ga sites, allowing a lower doping compensation effect. This work provides useful information for doping control and hence designing crystal-phase devices.

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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
crystal-phase devices, doping efficiency, nanowire, Si doping, wurtzite structure, zinc blende structure
in
ACS Applied Nano Materials
volume
6
issue
13
pages
7 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:85164926247
ISSN
2574-0970
DOI
10.1021/acsanm.3c01493
language
English
LU publication?
yes
id
1c116585-6fa3-4e25-891c-26274890cdc9
date added to LUP
2023-09-27 11:28:47
date last changed
2023-10-12 10:16:02
@article{1c116585-6fa3-4e25-891c-26274890cdc9,
  abstract     = {{<p>Crystal-phase engineering between zinc blende (ZB) and wurtzite (WZ) structures is becoming an important method in designing unique optoelectronic and electronic semiconductor devices. Doping to engineer their electric properties is thus of critical importance, but a direct experimental comparison in doping these two crystal structures is still missing. Nanowires (NWs) allow the coexistence of both structures due to their special growth mode. The differences in dopant incorporation between the two phases are studied here in GaAs NW shells that are coherently grown around the NWs, hence maintaining the crystal structure of the core. The Si dopant is observed to have a higher incorporation efficiency into the WZ structure due to a 2 times lower incorporation energy compared with that of the ZB structure. Besides, it can also be predicted that Si is more inclined toward Ga sites in both structures. Indeed, the As-site doping energy of the WZ structure is several orders of magnitude higher than that of Ga sites, allowing a lower doping compensation effect. This work provides useful information for doping control and hence designing crystal-phase devices.</p>}},
  author       = {{Hou, Qichao and Fonseka, H. Aruni and Martelli, Faustino and Paci, Barbara and Gustafsson, Anders and Gott, James A. and Yang, Hui and Huo, Suguo and Yu, Xuezhe and Chen, Lulu and Chu, Yanmeng and Zha, Chaofei and Zhang, Zheyu and Zhang, Linjun and Shang, Fuxiang and Fang, Wenzhang and Cheng, Zhiyuan and Sanchez, Ana M. and Liu, Huiyun and Zhang, Yunyan}},
  issn         = {{2574-0970}},
  keywords     = {{crystal-phase devices; doping efficiency; nanowire; Si doping; wurtzite structure; zinc blende structure}},
  language     = {{eng}},
  number       = {{13}},
  pages        = {{11465--11471}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{ACS Applied Nano Materials}},
  title        = {{Different Doping Behaviors of Silicon in Zinc Blende and Wurtzite GaAs Nanowires : Implications for Crystal-Phase Device Design}},
  url          = {{http://dx.doi.org/10.1021/acsanm.3c01493}},
  doi          = {{10.1021/acsanm.3c01493}},
  volume       = {{6}},
  year         = {{2023}},
}