Efficient Wideband mmW Transceiver Front End for 5G Base Stations in 22-nm FD-SOI CMOS
Elgaard, Christian LU ; Ozen, Mustafa ; Westesson, Eric ; Mahmoud, Ahmed LU ; Torres, Florent ; Reyaz, Shakila Bint ; Forsberg, Therese LU ; Akbar, Rehman ; Hagberg, Hans and Sjoland, Henrik LU
(2023)
In IEEE Journal of Solid-State Circuits
p.1-16
- Abstract
This article presents a fully integrated millimeter-wave (mmW) transceiver front end covering 24.25–29.5 GHz. It features a wideband Doherty power amplifier utilizing adaptive bias and a transmit/receive switch (TRX-switch) that has embedded low noise amplifier to antenna matching. The phase shift of 90<inline-formula> <tex-math notation="LaTeX">$^\circ$</tex-math> </inline-formula> to the Doherty auxiliary amplifier is achieved using a separate IQ-mixer with rearranged phases in the auxiliary path, ensuring a wideband 90<inline-formula> <tex-math notation="LaTeX">$^\circ$</tex-math> </inline-formula> phase shift, and avoiding 3-dB loss from radio frequency (RF) input power... (More)
This article presents a fully integrated millimeter-wave (mmW) transceiver front end covering 24.25–29.5 GHz. It features a wideband Doherty power amplifier utilizing adaptive bias and a transmit/receive switch (TRX-switch) that has embedded low noise amplifier to antenna matching. The phase shift of 90<inline-formula> <tex-math notation="LaTeX">$^\circ$</tex-math> </inline-formula> to the Doherty auxiliary amplifier is achieved using a separate IQ-mixer with rearranged phases in the auxiliary path, ensuring a wideband 90<inline-formula> <tex-math notation="LaTeX">$^\circ$</tex-math> </inline-formula> phase shift, and avoiding 3-dB loss from radio frequency (RF) input power splitting. Special emphasis is on the analysis of adaptive bias, the Doherty output combiner network, the decoupling capacitors, and the TRX-switch. Including TRX-switch losses of 1.1 dB in transmit mode, the transmitter reaches a saturated output power of 18.3 dBm with a 1-dB output compression point of 15.9 dBm. Stimulated with a 400-MHz 16-QAM orthogonal frequency-division multiplexing (OFDM) IQ-signal at baseband, without digital IQ-compensation and predistortion, the transmitter delivers a 26.5-GHz modulated signal with an output power (<inline-formula> <tex-math notation="LaTeX">$P_{\rm out}$</tex-math> </inline-formula>) of 12.8 dBm and an error vector magnitude (EVM) of <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>20.2 dB. The complete transmitter, including quadrature local oscillator drivers, then achieves a power added efficiency (PAE) of 5.8%. For a 1600-MHz wide 64-QAM OFDM signal, <inline-formula> <tex-math notation="LaTeX">$P_{\rm out}$</tex-math> </inline-formula> is 9.0 dBm, with an EVM <inline-formula> <tex-math notation="LaTeX">$=$</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>23.3 dB and a complete transmitter PAE of 3.2%. In receive mode including TRX-switch, at 27.25 GHz, the noise figure is below 4 dB with a gain of 23 dB and a third-order input-referred intercept point of <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>9 dBm. The active part of the die, manufactured in 22-nm fully depleted silicon on insulator (FD-SOI) CMOS, occupies 2.3 mm<inline-formula> <tex-math notation="LaTeX">$^2$</tex-math> </inline-formula>.
(Less)
- author
- Elgaard, Christian
LU
; Ozen, Mustafa
; Westesson, Eric
; Mahmoud, Ahmed
LU
; Torres, Florent
; Reyaz, Shakila Bint
; Forsberg, Therese
LU
; Akbar, Rehman
; Hagberg, Hans
and Sjoland, Henrik
LU
- organization
- publishing date
- 2023
- type
- Contribution to journal
- publication status
- epub
- subject
- keywords
- 5G mobile communication, Adaptive bias, Array signal processing, decoupling, Doherty power amplifier, Gain, image rejection (IR), local oscillator (LO)-leakage, low noise amplifier (LNA), millimeter-wave (mmW), mixer, Power amplifiers, Power generation, transceiver (TRX), Transceivers, transmit/receive switch (TRX-switch), Wideband
- in
- IEEE Journal of Solid-State Circuits
- pages
- 16 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- scopus:85162653154
- ISSN
- 0018-9200
- DOI
- 10.1109/JSSC.2023.3282696
- language
- English
- LU publication?
- yes
- id
- 1c4ebc06-6f3c-4afd-9244-c76db3e09e83
- date added to LUP
- 2023-10-23 12:51:33
- date last changed
- 2024-04-05 00:27:57
@article{1c4ebc06-6f3c-4afd-9244-c76db3e09e83,
abstract = {{<p>This article presents a fully integrated millimeter-wave (mmW) transceiver front end covering 24.25&#x2013;29.5 GHz. It features a wideband Doherty power amplifier utilizing adaptive bias and a transmit/receive switch (TRX-switch) that has embedded low noise amplifier to antenna matching. The phase shift of 90<inline-formula> <tex-math notation="LaTeX">$^\circ$</tex-math> </inline-formula> to the Doherty auxiliary amplifier is achieved using a separate IQ-mixer with rearranged phases in the auxiliary path, ensuring a wideband 90<inline-formula> <tex-math notation="LaTeX">$^\circ$</tex-math> </inline-formula> phase shift, and avoiding 3-dB loss from radio frequency (RF) input power splitting. Special emphasis is on the analysis of adaptive bias, the Doherty output combiner network, the decoupling capacitors, and the TRX-switch. Including TRX-switch losses of 1.1 dB in transmit mode, the transmitter reaches a saturated output power of 18.3 dBm with a 1-dB output compression point of 15.9 dBm. Stimulated with a 400-MHz 16-QAM orthogonal frequency-division multiplexing (OFDM) IQ-signal at baseband, without digital IQ-compensation and predistortion, the transmitter delivers a 26.5-GHz modulated signal with an output power (<inline-formula> <tex-math notation="LaTeX">$P_{\rm out}$</tex-math> </inline-formula>) of 12.8 dBm and an error vector magnitude (EVM) of <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>20.2 dB. The complete transmitter, including quadrature local oscillator drivers, then achieves a power added efficiency (PAE) of 5.8%. For a 1600-MHz wide 64-QAM OFDM signal, <inline-formula> <tex-math notation="LaTeX">$P_{\rm out}$</tex-math> </inline-formula> is 9.0 dBm, with an EVM <inline-formula> <tex-math notation="LaTeX">$=$</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>23.3 dB and a complete transmitter PAE of 3.2%. In receive mode including TRX-switch, at 27.25 GHz, the noise figure is below 4 dB with a gain of 23 dB and a third-order input-referred intercept point of <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>9 dBm. The active part of the die, manufactured in 22-nm fully depleted silicon on insulator (FD-SOI) CMOS, occupies 2.3 mm<inline-formula> <tex-math notation="LaTeX">$^2$</tex-math> </inline-formula>.</p>}},
author = {{Elgaard, Christian and Ozen, Mustafa and Westesson, Eric and Mahmoud, Ahmed and Torres, Florent and Reyaz, Shakila Bint and Forsberg, Therese and Akbar, Rehman and Hagberg, Hans and Sjoland, Henrik}},
issn = {{0018-9200}},
keywords = {{5G mobile communication; Adaptive bias; Array signal processing; decoupling; Doherty power amplifier; Gain; image rejection (IR); local oscillator (LO)-leakage; low noise amplifier (LNA); millimeter-wave (mmW); mixer; Power amplifiers; Power generation; transceiver (TRX); Transceivers; transmit/receive switch (TRX-switch); Wideband}},
language = {{eng}},
pages = {{1--16}},
publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
series = {{IEEE Journal of Solid-State Circuits}},
title = {{Efficient Wideband mmW Transceiver Front End for 5G Base Stations in 22-nm FD-SOI CMOS}},
url = {{http://dx.doi.org/10.1109/JSSC.2023.3282696}},
doi = {{10.1109/JSSC.2023.3282696}},
year = {{2023}},
}