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Tunneling-based devices and circuits

Wernersson, Lars-Erik LU ; Egard, Mikael LU ; Ärlelid, Mats LU and Lind, Erik LU orcid (2010) IEEE International Conference on IC Design and Technology (ICICDT) p.190-193
Abstract
We describe the implementation of a gated resonant tunneling diode and its application in a wavelet generator. The GaAs-based device is fabricated by embedding a metal gate directly above a double barrier heterostructure with a peak current of 120 kA/cm2. The gate is used to modulate the tunneling current via the Schottky depletion around the buried metal. We integrate the gated tunnel diodes in oscillator circuits and use the gate to form RF-bursts or wavelets. Measured data in the K- and V-band verify a good control of the length, phase, and pulse position reaching for pulses with lengths well below 100 ps.
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
2010 IEEE International Conference on IC Design and Technology (ICICDT)
pages
4 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
IEEE International Conference on IC Design and Technology (ICICDT)
conference location
MINATEC, Grenoble, France
conference dates
2010-06-04
external identifiers
  • scopus:77955599967
ISBN
978-1-4244-5773-1
DOI
10.1109/ICICDT.2010.5510256
project
EIT_HSWC:RFNano RF tranceivers and nano devices
language
English
LU publication?
yes
id
0e63d090-2965-4f7b-9b48-c39573c09158 (old id 2019012)
date added to LUP
2016-04-04 10:24:41
date last changed
2025-04-04 15:25:01
@inproceedings{0e63d090-2965-4f7b-9b48-c39573c09158,
  abstract     = {{We describe the implementation of a gated resonant tunneling diode and its application in a wavelet generator. The GaAs-based device is fabricated by embedding a metal gate directly above a double barrier heterostructure with a peak current of 120 kA/cm2. The gate is used to modulate the tunneling current via the Schottky depletion around the buried metal. We integrate the gated tunnel diodes in oscillator circuits and use the gate to form RF-bursts or wavelets. Measured data in the K- and V-band verify a good control of the length, phase, and pulse position reaching for pulses with lengths well below 100 ps.}},
  author       = {{Wernersson, Lars-Erik and Egard, Mikael and Ärlelid, Mats and Lind, Erik}},
  booktitle    = {{2010 IEEE International Conference on IC Design and Technology (ICICDT)}},
  isbn         = {{978-1-4244-5773-1}},
  language     = {{eng}},
  pages        = {{190--193}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{Tunneling-based devices and circuits}},
  url          = {{http://dx.doi.org/10.1109/ICICDT.2010.5510256}},
  doi          = {{10.1109/ICICDT.2010.5510256}},
  year         = {{2010}},
}