Tunneling-based devices and circuits
(2010) IEEE International Conference on IC Design and Technology (ICICDT) p.190-193- Abstract
- We describe the implementation of a gated resonant tunneling diode and its application in a wavelet generator. The GaAs-based device is fabricated by embedding a metal gate directly above a double barrier heterostructure with a peak current of 120 kA/cm2. The gate is used to modulate the tunneling current via the Schottky depletion around the buried metal. We integrate the gated tunnel diodes in oscillator circuits and use the gate to form RF-bursts or wavelets. Measured data in the K- and V-band verify a good control of the length, phase, and pulse position reaching for pulses with lengths well below 100 ps.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2019012
- author
- Wernersson, Lars-Erik
LU
; Egard, Mikael
LU
; Ärlelid, Mats
LU
and Lind, Erik
LU
- organization
- publishing date
- 2010
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- 2010 IEEE International Conference on IC Design and Technology (ICICDT)
- pages
- 4 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- IEEE International Conference on IC Design and Technology (ICICDT)
- conference location
- MINATEC, Grenoble, France
- conference dates
- 2010-06-04
- external identifiers
-
- scopus:77955599967
- ISBN
- 978-1-4244-5773-1
- DOI
- 10.1109/ICICDT.2010.5510256
- project
- EIT_HSWC:RFNano RF tranceivers and nano devices
- language
- English
- LU publication?
- yes
- id
- 0e63d090-2965-4f7b-9b48-c39573c09158 (old id 2019012)
- date added to LUP
- 2016-04-04 10:24:41
- date last changed
- 2025-04-04 15:25:01
@inproceedings{0e63d090-2965-4f7b-9b48-c39573c09158, abstract = {{We describe the implementation of a gated resonant tunneling diode and its application in a wavelet generator. The GaAs-based device is fabricated by embedding a metal gate directly above a double barrier heterostructure with a peak current of 120 kA/cm2. The gate is used to modulate the tunneling current via the Schottky depletion around the buried metal. We integrate the gated tunnel diodes in oscillator circuits and use the gate to form RF-bursts or wavelets. Measured data in the K- and V-band verify a good control of the length, phase, and pulse position reaching for pulses with lengths well below 100 ps.}}, author = {{Wernersson, Lars-Erik and Egard, Mikael and Ärlelid, Mats and Lind, Erik}}, booktitle = {{2010 IEEE International Conference on IC Design and Technology (ICICDT)}}, isbn = {{978-1-4244-5773-1}}, language = {{eng}}, pages = {{190--193}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{Tunneling-based devices and circuits}}, url = {{http://dx.doi.org/10.1109/ICICDT.2010.5510256}}, doi = {{10.1109/ICICDT.2010.5510256}}, year = {{2010}}, }