Advanced

Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides

Laukkanen, P.; Punkkinen, M. P. J.; Lang, J.; Tuominen, M.; Kuzmin, M.; Tuominen, V.; Dahl, J.; Adell, Johan LU ; Sadowski, Janusz LU and Kanski, J., et al. (2011) In Applied Physics Letters 98(23).
Abstract
Amorphous surface oxides of III-V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1x2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption. (C) 2011 American Institute of Physics. [doi:10.1063/1.3596702]
Please use this url to cite or link to this publication:
author
, et al. (More)
(Less)
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
98
issue
23
publisher
American Institute of Physics
external identifiers
  • wos:000291658900022
  • scopus:79959343655
ISSN
0003-6951
DOI
10.1063/1.3596702
language
English
LU publication?
yes
id
84a48b85-1d85-40e1-8c52-cc737544e058 (old id 2056848)
date added to LUP
2011-07-26 10:56:41
date last changed
2017-01-01 03:11:10
@article{84a48b85-1d85-40e1-8c52-cc737544e058,
  abstract     = {Amorphous surface oxides of III-V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1x2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption. (C) 2011 American Institute of Physics. [doi:10.1063/1.3596702]},
  articleno    = {231908},
  author       = {Laukkanen, P. and Punkkinen, M. P. J. and Lang, J. and Tuominen, M. and Kuzmin, M. and Tuominen, V. and Dahl, J. and Adell, Johan and Sadowski, Janusz and Kanski, J. and Polojarvi, V. and Pakarinen, J. and Kokko, K. and Guina, M. and Pessa, M. and Vayrynen, I. J.},
  issn         = {0003-6951},
  language     = {eng},
  number       = {23},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides},
  url          = {http://dx.doi.org/10.1063/1.3596702},
  volume       = {98},
  year         = {2011},
}