Properties of electrical contacts to filamentary nanocrystals
(2007) In Vestnik Voronezskogo Gosudarstvennogo Tehnicheskogo Universiteta 3(11). p.67-70- Abstract
- We investigated properties of electrical contacts to filamentary nanocrystals based on InAs, synthesized by chemical-beam epitaxy. Robust, low resistive Ohmic contacts were manufactured to InAs segment of filamentary nanocrystals both directly and indirectly, through a catalytic particle at the top of nanocrystals. Current-voltage characteristics and degradation characteristics of devices based on InAs nanocrystals with electrical contacts are presented. It was determined, that properties of electrical contacts to nanocrystals can be improved by excluding natural oxide layer on the interface between metal and nanocrystal material.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2058136
- author
- Suyatin, Dmitry
LU
; Pettersson, H. ; Maximov, Ivan LU
; Soldatov, E.S. and Samuelson, Lars LU
- organization
- publishing date
- 2007
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Vestnik Voronezskogo Gosudarstvennogo Tehnicheskogo Universiteta
- volume
- 3
- issue
- 11
- pages
- 67 - 70
- language
- Russian
- LU publication?
- yes
- id
- de1ec219-157f-4c49-9294-0d6ec41cf7e6 (old id 2058136)
- date added to LUP
- 2016-04-04 14:19:51
- date last changed
- 2019-05-17 02:17:39
@article{de1ec219-157f-4c49-9294-0d6ec41cf7e6, abstract = {{We investigated properties of electrical contacts to filamentary nanocrystals based on InAs, synthesized by chemical-beam epitaxy. Robust, low resistive Ohmic contacts were manufactured to InAs segment of filamentary nanocrystals both directly and indirectly, through a catalytic particle at the top of nanocrystals. Current-voltage characteristics and degradation characteristics of devices based on InAs nanocrystals with electrical contacts are presented. It was determined, that properties of electrical contacts to nanocrystals can be improved by excluding natural oxide layer on the interface between metal and nanocrystal material.}}, author = {{Suyatin, Dmitry and Pettersson, H. and Maximov, Ivan and Soldatov, E.S. and Samuelson, Lars}}, language = {{rus}}, number = {{11}}, pages = {{67--70}}, series = {{Vestnik Voronezskogo Gosudarstvennogo Tehnicheskogo Universiteta}}, title = {{Properties of electrical contacts to filamentary nanocrystals}}, volume = {{3}}, year = {{2007}}, }