Metal nanoelectrodes for molecular transistor and investigation of electron transport in molecular systems.
(2003) 10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY 5023. p.327-329- Abstract
- Gold nanoelectrodes with gaps of less than 10 nm were formed by conventional E-beam lithography on silicon substrates covered by Al2O3. Molecular films were deposited on the electrodes by Langmuir-Shaefer technique. The I-V curves of such systems show a suppressed conductance indicating a correlated electron tunnelling through the system. All measurements were made at room temperature.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2060014
- author
- Suyatin, Dmitry LU ; Soldatov, E.S. ; Maximov, Ivan LU ; Montelius, Lars LU ; Samuelson, Lars LU ; Khomutov, G.B. ; Gubin, S.P. and Sergeev-Cherenkov, A.N.
- publishing date
- 2003
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- single-electron tunneling, correlated electron tunneling, molecular electronics, molecular clusters, nanoelectrodes
- host publication
- [Host publication title missing]
- editor
- Alferov, Z.I. and Esaki, L.
- volume
- 5023
- pages
- 3 pages
- publisher
- SPIE
- conference name
- 10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY
- conference location
- St. Petersburg, Russian Federation
- conference dates
- 2002-06-17
- external identifiers
-
- scopus:0042377389
- language
- English
- LU publication?
- no
- id
- b94af789-d56e-4514-a3b3-963722e29dc2 (old id 2060014)
- date added to LUP
- 2016-04-04 11:44:27
- date last changed
- 2022-02-21 05:16:20
@inproceedings{b94af789-d56e-4514-a3b3-963722e29dc2, abstract = {{Gold nanoelectrodes with gaps of less than 10 nm were formed by conventional E-beam lithography on silicon substrates covered by Al2O3. Molecular films were deposited on the electrodes by Langmuir-Shaefer technique. The I-V curves of such systems show a suppressed conductance indicating a correlated electron tunnelling through the system. All measurements were made at room temperature.}}, author = {{Suyatin, Dmitry and Soldatov, E.S. and Maximov, Ivan and Montelius, Lars and Samuelson, Lars and Khomutov, G.B. and Gubin, S.P. and Sergeev-Cherenkov, A.N.}}, booktitle = {{[Host publication title missing]}}, editor = {{Alferov, Z.I. and Esaki, L.}}, keywords = {{single-electron tunneling; correlated electron tunneling; molecular electronics; molecular clusters; nanoelectrodes}}, language = {{eng}}, pages = {{327--329}}, publisher = {{SPIE}}, title = {{Metal nanoelectrodes for molecular transistor and investigation of electron transport in molecular systems.}}, volume = {{5023}}, year = {{2003}}, }