Nanoscaled ferromagnetic single electron transistors
(2007) 7TH IEEE CONFERENCE ON NANOTECHNOLOGY 1-3. p.420-423- Abstract
- We report on a summary of fabricating and characterizing nanoscaled ferromagnetic single-electron transistors (F-SETs). One type of device is assembled with an atomic force microscope. A single 30 nm Au disc, forming the central island of the transistor, is manipulated with Angstrom precision into the gap between plasma oxidized Ni source and drain electrodes which are designed with different geometries to facilitate magnetic moment reversal at different magnetic fields. The tunnel resistances can be tuned in real-time during the device fabrication by re-positioning the An disc. A second type of device with Co electrodes and a central Au island is fabricated using a high-precision alignment procedure invoked during e-beam writing. Both... (More)
- We report on a summary of fabricating and characterizing nanoscaled ferromagnetic single-electron transistors (F-SETs). One type of device is assembled with an atomic force microscope. A single 30 nm Au disc, forming the central island of the transistor, is manipulated with Angstrom precision into the gap between plasma oxidized Ni source and drain electrodes which are designed with different geometries to facilitate magnetic moment reversal at different magnetic fields. The tunnel resistances can be tuned in real-time during the device fabrication by re-positioning the An disc. A second type of device with Co electrodes and a central Au island is fabricated using a high-precision alignment procedure invoked during e-beam writing. Both devices exhibit single-electron transistor characteristics at 4.2K. From magnetotransport measurements carried out at 1.7K, we found that it is more efficient to realize spin injection and detection in Co/Au/Co devices fabricated with the second technique. A maximum TMR of about 4% was observed in these devices. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2060032
- author
- Liu, R.S.
; Pettersson, H.
; Suyatin, Dmitry
LU
; Michalak, Lukasz LU ; Canali, Carlo LU and Samuelson, Lars LU
- organization
- publishing date
- 2007
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Spintronics, Ferromagnetic Single-Electron Transistor, Coulomb Blockad, Tunneling Magnetoresistance, MAGNETO-COULOMB OSCILLATIONS, NANOPARTICLES, DEVICES
- host publication
- [Host publication title missing]
- volume
- 1-3
- pages
- 4 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 7TH IEEE CONFERENCE ON NANOTECHNOLOGY
- conference location
- Hong Kong, China
- conference dates
- 2007-08-02
- external identifiers
-
- scopus:52949147451
- language
- English
- LU publication?
- yes
- id
- 15e691fd-802b-445a-a5bd-fbcd5ed17c58 (old id 2060032)
- date added to LUP
- 2016-04-04 11:36:42
- date last changed
- 2022-01-29 22:09:30
@inproceedings{15e691fd-802b-445a-a5bd-fbcd5ed17c58, abstract = {{We report on a summary of fabricating and characterizing nanoscaled ferromagnetic single-electron transistors (F-SETs). One type of device is assembled with an atomic force microscope. A single 30 nm Au disc, forming the central island of the transistor, is manipulated with Angstrom precision into the gap between plasma oxidized Ni source and drain electrodes which are designed with different geometries to facilitate magnetic moment reversal at different magnetic fields. The tunnel resistances can be tuned in real-time during the device fabrication by re-positioning the An disc. A second type of device with Co electrodes and a central Au island is fabricated using a high-precision alignment procedure invoked during e-beam writing. Both devices exhibit single-electron transistor characteristics at 4.2K. From magnetotransport measurements carried out at 1.7K, we found that it is more efficient to realize spin injection and detection in Co/Au/Co devices fabricated with the second technique. A maximum TMR of about 4% was observed in these devices.}}, author = {{Liu, R.S. and Pettersson, H. and Suyatin, Dmitry and Michalak, Lukasz and Canali, Carlo and Samuelson, Lars}}, booktitle = {{[Host publication title missing]}}, keywords = {{Spintronics; Ferromagnetic Single-Electron Transistor; Coulomb Blockad; Tunneling Magnetoresistance; MAGNETO-COULOMB OSCILLATIONS; NANOPARTICLES; DEVICES}}, language = {{eng}}, pages = {{420--423}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{Nanoscaled ferromagnetic single electron transistors}}, volume = {{1-3}}, year = {{2007}}, }