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Remnant magnetoresistance effect at the intersection of two ferromagnetic (Ga,Mn)As nanowires

Andrearczyk, Tomasz; Wosinski, Tadeusz; Figielski, Tadeusz; Makosa, Andrzej; Krogulec, Iwona; Wrobel, Jerzy and Sadowski, Janusz LU (2011) In Physica Status Solidi. B: Basic Research 248(7). p.1587-1591
Abstract
Cross-like nanostructures composed of two perpendicular ferromagnetic (Ga,Mn)As nanowires were fabricated using electron-beam lithography patterning. Nanostructures of different orientations with respect to the crystallographic axes of the parent (Ga,Mn)As epitaxial layer were studied. Electrical resistance of individual nanowires as a function of applied magnetic field were investigated at low temperatures. Low-field magnetoresistance (MR) of the nanowires exhibits hysteresis-like behaviour and related remnant resistance in zero magnetic field. These effects are explained in terms of magnetic domain walls (DWs) pinned at the wires intersection, which contribute to the wire resistance. The DW resistivity, which depends on the degree of... (More)
Cross-like nanostructures composed of two perpendicular ferromagnetic (Ga,Mn)As nanowires were fabricated using electron-beam lithography patterning. Nanostructures of different orientations with respect to the crystallographic axes of the parent (Ga,Mn)As epitaxial layer were studied. Electrical resistance of individual nanowires as a function of applied magnetic field were investigated at low temperatures. Low-field magnetoresistance (MR) of the nanowires exhibits hysteresis-like behaviour and related remnant resistance in zero magnetic field. These effects are explained in terms of magnetic domain walls (DWs) pinned at the wires intersection, which contribute to the wire resistance. The DW resistivity, which depends on the degree of spin misalignment in the wall, has been determined to be of the order of 1 Omega mu m(2). High-field MR has, in turn, allowed determining the lithography-induced anisotropy field for the nanowires of different crystallographic orientations. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
domain walls, ferromagnetic semiconductors, GaMnAs, magnetoresistance, nanostructures
in
Physica Status Solidi. B: Basic Research
volume
248
issue
7
pages
1587 - 1591
publisher
John Wiley & Sons
external identifiers
  • wos:000293033000008
  • scopus:79959590944
ISSN
0370-1972
DOI
10.1002/pssb.201001099
language
English
LU publication?
yes
id
56f9b640-0217-4ba0-8965-f5db997c6739 (old id 2088465)
date added to LUP
2011-08-25 14:31:26
date last changed
2017-01-01 05:22:30
@article{56f9b640-0217-4ba0-8965-f5db997c6739,
  abstract     = {Cross-like nanostructures composed of two perpendicular ferromagnetic (Ga,Mn)As nanowires were fabricated using electron-beam lithography patterning. Nanostructures of different orientations with respect to the crystallographic axes of the parent (Ga,Mn)As epitaxial layer were studied. Electrical resistance of individual nanowires as a function of applied magnetic field were investigated at low temperatures. Low-field magnetoresistance (MR) of the nanowires exhibits hysteresis-like behaviour and related remnant resistance in zero magnetic field. These effects are explained in terms of magnetic domain walls (DWs) pinned at the wires intersection, which contribute to the wire resistance. The DW resistivity, which depends on the degree of spin misalignment in the wall, has been determined to be of the order of 1 Omega mu m(2). High-field MR has, in turn, allowed determining the lithography-induced anisotropy field for the nanowires of different crystallographic orientations. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim},
  author       = {Andrearczyk, Tomasz and Wosinski, Tadeusz and Figielski, Tadeusz and Makosa, Andrzej and Krogulec, Iwona and Wrobel, Jerzy and Sadowski, Janusz},
  issn         = {0370-1972},
  keyword      = {domain walls,ferromagnetic semiconductors,GaMnAs,magnetoresistance,nanostructures},
  language     = {eng},
  number       = {7},
  pages        = {1587--1591},
  publisher    = {John Wiley & Sons},
  series       = {Physica Status Solidi. B: Basic Research},
  title        = {Remnant magnetoresistance effect at the intersection of two ferromagnetic (Ga,Mn)As nanowires},
  url          = {http://dx.doi.org/10.1002/pssb.201001099},
  volume       = {248},
  year         = {2011},
}