Structural and magnetic properties of GaAs:(Mn,Ga)As granular layers
(2011) In Physica Status Solidi. B: Basic Research 248(7). p.1609-1614- Abstract
- Granular GaAs:(Mn,Ga)As films were prepared by annealing the Ga0.92Mn0.08As/GaAs layer grown by the MBE method at low temperature. The annealing was performed at 500 or 600 degrees C. It is commonly accepted that this processing should result in formation of cubic zinc blende or hexagonal MnAs inclusions depending on the temperature. We demonstrate that such a priory assumption is not justified. The kind of formed inclusions depends not only on the annealing temperature but also on the number of defects and Mn atoms in the substitutional and interstitial positions in as grown sample. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2088474
- author
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- granular material, room temperature ferromagnetism, spintronics
- in
- Physica Status Solidi. B: Basic Research
- volume
- 248
- issue
- 7
- pages
- 1609 - 1614
- publisher
- John Wiley & Sons Inc.
- external identifiers
-
- wos:000293033000013
- scopus:79959627110
- ISSN
- 0370-1972
- DOI
- 10.1002/pssb.201001187
- language
- English
- LU publication?
- yes
- id
- 765ae053-3c6a-47d0-b3b2-b52bc5d69b07 (old id 2088474)
- date added to LUP
- 2016-04-01 14:10:56
- date last changed
- 2022-03-31 14:53:41
@article{765ae053-3c6a-47d0-b3b2-b52bc5d69b07, abstract = {{Granular GaAs:(Mn,Ga)As films were prepared by annealing the Ga0.92Mn0.08As/GaAs layer grown by the MBE method at low temperature. The annealing was performed at 500 or 600 degrees C. It is commonly accepted that this processing should result in formation of cubic zinc blende or hexagonal MnAs inclusions depending on the temperature. We demonstrate that such a priory assumption is not justified. The kind of formed inclusions depends not only on the annealing temperature but also on the number of defects and Mn atoms in the substitutional and interstitial positions in as grown sample. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim}}, author = {{Lawniczak-Jablonska, K. and Libera, J. and Wolska, A. and Klepka, M. T. and Dluzewski, P. and Bak-Misiuk, J. and Dynowska, E. and Romanowski, P. and Domagala, J. Z. and Sadowski, Janusz and Barcz, A. and Wasik, D. and Twardowski, A. and Kwiatkowski, A.}}, issn = {{0370-1972}}, keywords = {{granular material; room temperature ferromagnetism; spintronics}}, language = {{eng}}, number = {{7}}, pages = {{1609--1614}}, publisher = {{John Wiley & Sons Inc.}}, series = {{Physica Status Solidi. B: Basic Research}}, title = {{Structural and magnetic properties of GaAs:(Mn,Ga)As granular layers}}, url = {{http://dx.doi.org/10.1002/pssb.201001187}}, doi = {{10.1002/pssb.201001187}}, volume = {{248}}, year = {{2011}}, }