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Design of RF Properties for Vertical Nanowire MOSFETs

Lind, Erik LU and Wernersson, Lars-Erik LU (2011) In IEEE Transactions on Nanotechnology 10(4). p.668-673
Abstract
The RF performance of vertical nanowire metal-oxide-semiconductor field-effect transistors in realistic layouts has been calculated. The parasitic capacitances have been evaluated using full 3-D finite-element method calculations, combined with self-consistent Schrodinger-Poisson calculations for the intrinsic gate capacitances. It is shown that a performance comparable to planar FETs can be achieved in the vertical geometry by scaling the nanowire diameter and the wire-to-wire separation.
Please use this url to cite or link to this publication:
author
and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Field-effect transistors, InAs, metal-oxide-semiconductor field-effect, transistor (MOSFET), modeling, nanowire, parasitic capacitance
in
IEEE Transactions on Nanotechnology
volume
10
issue
4
pages
668 - 673
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000292966400002
  • scopus:78649995472
ISSN
1536-125X
DOI
10.1109/TNANO.2010.2064783
language
English
LU publication?
yes
id
87a058c1-eeaf-4ffd-8309-31683e0baffe (old id 2091609)
date added to LUP
2016-04-01 14:50:36
date last changed
2023-09-03 19:58:15
@article{87a058c1-eeaf-4ffd-8309-31683e0baffe,
  abstract     = {{The RF performance of vertical nanowire metal-oxide-semiconductor field-effect transistors in realistic layouts has been calculated. The parasitic capacitances have been evaluated using full 3-D finite-element method calculations, combined with self-consistent Schrodinger-Poisson calculations for the intrinsic gate capacitances. It is shown that a performance comparable to planar FETs can be achieved in the vertical geometry by scaling the nanowire diameter and the wire-to-wire separation.}},
  author       = {{Lind, Erik and Wernersson, Lars-Erik}},
  issn         = {{1536-125X}},
  keywords     = {{Field-effect transistors; InAs; metal-oxide-semiconductor field-effect; transistor (MOSFET); modeling; nanowire; parasitic capacitance}},
  language     = {{eng}},
  number       = {{4}},
  pages        = {{668--673}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Transactions on Nanotechnology}},
  title        = {{Design of RF Properties for Vertical Nanowire MOSFETs}},
  url          = {{http://dx.doi.org/10.1109/TNANO.2010.2064783}},
  doi          = {{10.1109/TNANO.2010.2064783}},
  volume       = {{10}},
  year         = {{2011}},
}