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Design of RF Properties for Vertical Nanowire MOSFETs

Lind, Erik LU and Wernersson, Lars-Erik LU (2011) In IEEE Transactions on Nanotechnology 10(4). p.668-673
Abstract
The RF performance of vertical nanowire metal-oxide-semiconductor field-effect transistors in realistic layouts has been calculated. The parasitic capacitances have been evaluated using full 3-D finite-element method calculations, combined with self-consistent Schrodinger-Poisson calculations for the intrinsic gate capacitances. It is shown that a performance comparable to planar FETs can be achieved in the vertical geometry by scaling the nanowire diameter and the wire-to-wire separation.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Field-effect transistors, InAs, metal-oxide-semiconductor field-effect, transistor (MOSFET), modeling, nanowire, parasitic capacitance
in
IEEE Transactions on Nanotechnology
volume
10
issue
4
pages
668 - 673
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000292966400002
  • scopus:78649995472
ISSN
1536-125X
DOI
10.1109/TNANO.2010.2064783
language
English
LU publication?
yes
id
87a058c1-eeaf-4ffd-8309-31683e0baffe (old id 2091609)
date added to LUP
2011-08-25 14:08:52
date last changed
2017-01-01 06:27:56
@article{87a058c1-eeaf-4ffd-8309-31683e0baffe,
  abstract     = {The RF performance of vertical nanowire metal-oxide-semiconductor field-effect transistors in realistic layouts has been calculated. The parasitic capacitances have been evaluated using full 3-D finite-element method calculations, combined with self-consistent Schrodinger-Poisson calculations for the intrinsic gate capacitances. It is shown that a performance comparable to planar FETs can be achieved in the vertical geometry by scaling the nanowire diameter and the wire-to-wire separation.},
  author       = {Lind, Erik and Wernersson, Lars-Erik},
  issn         = {1536-125X},
  keyword      = {Field-effect transistors,InAs,metal-oxide-semiconductor field-effect,transistor (MOSFET),modeling,nanowire,parasitic capacitance},
  language     = {eng},
  number       = {4},
  pages        = {668--673},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Transactions on Nanotechnology},
  title        = {Design of RF Properties for Vertical Nanowire MOSFETs},
  url          = {http://dx.doi.org/10.1109/TNANO.2010.2064783},
  volume       = {10},
  year         = {2011},
}