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Defect-induced infrared electroluminescence from radial GaInP/AlGaInP quantum well nanowire array light- emitting diodes

Hussain, Laiq LU ; Karimi, Mohammad LU ; Berg, Alexander LU ; Jain, Vishal LU ; Borgström, Magnus T. LU ; Gustafsson, Anders LU ; Samuelson, Lars LU and Pettersson, Håkan LU (2017) In Nanotechnology 28(48).
Abstract

Radial GaInP/AlGaInP nanowire array light-emitting diodes (LEDs) are promising candidates for novel high-efficiency solid state lighting due to their potentially large strain-free active emission volumes compared to planar LEDs. Moreover, by proper tuning of the diameter of the nanowires, the fraction of emitted light extracted can be significantly enhanced compared to that of planar LEDs. Reports so far on radial growth of nanowire LED structures, however, still point to significant challenges related to obtaining defect-free radial heterostructures. In this work, we present evidence of optically active growth-induced defects in a fairly broad energy range in vertically processed radial GaInP/AlGaInP quantum well nanowire array LEDs... (More)

Radial GaInP/AlGaInP nanowire array light-emitting diodes (LEDs) are promising candidates for novel high-efficiency solid state lighting due to their potentially large strain-free active emission volumes compared to planar LEDs. Moreover, by proper tuning of the diameter of the nanowires, the fraction of emitted light extracted can be significantly enhanced compared to that of planar LEDs. Reports so far on radial growth of nanowire LED structures, however, still point to significant challenges related to obtaining defect-free radial heterostructures. In this work, we present evidence of optically active growth-induced defects in a fairly broad energy range in vertically processed radial GaInP/AlGaInP quantum well nanowire array LEDs using a variety of complementary experimental techniques. In particular, we demonstrate strong infrared electroluminescence in a spectral range centred around 1 eV (1.2 μm) in addition to the expected red light emission from the quantum well. Spatially resolved cathodoluminescence studies reveal a patchy red light emission with clear spectral features along the NWs, most likely induced by variations in QW thickness, composition and barriers. Dark areas are attributed to infrared emission generated by competing defect-assisted radiative transitions, or to trapping mechanisms involving non-radiative recombination processes. Possible origins of the defects are discussed.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
defect-induced emission, GaInP LED, infrared emission, light-emitting diode, nanowire LED, radial core-shell nanowires
in
Nanotechnology
volume
28
issue
48
publisher
IOP Publishing
external identifiers
  • scopus:85033687191
  • wos:000415052500002
ISSN
0957-4484
DOI
10.1088/1361-6528/aa913c
language
English
LU publication?
yes
id
20cc34e3-c849-4cd0-a490-afce4eff8527
date added to LUP
2017-11-24 08:32:35
date last changed
2018-06-10 05:25:01
@article{20cc34e3-c849-4cd0-a490-afce4eff8527,
  abstract     = {<p>Radial GaInP/AlGaInP nanowire array light-emitting diodes (LEDs) are promising candidates for novel high-efficiency solid state lighting due to their potentially large strain-free active emission volumes compared to planar LEDs. Moreover, by proper tuning of the diameter of the nanowires, the fraction of emitted light extracted can be significantly enhanced compared to that of planar LEDs. Reports so far on radial growth of nanowire LED structures, however, still point to significant challenges related to obtaining defect-free radial heterostructures. In this work, we present evidence of optically active growth-induced defects in a fairly broad energy range in vertically processed radial GaInP/AlGaInP quantum well nanowire array LEDs using a variety of complementary experimental techniques. In particular, we demonstrate strong infrared electroluminescence in a spectral range centred around 1 eV (1.2 μm) in addition to the expected red light emission from the quantum well. Spatially resolved cathodoluminescence studies reveal a patchy red light emission with clear spectral features along the NWs, most likely induced by variations in QW thickness, composition and barriers. Dark areas are attributed to infrared emission generated by competing defect-assisted radiative transitions, or to trapping mechanisms involving non-radiative recombination processes. Possible origins of the defects are discussed.</p>},
  articleno    = {485205},
  author       = {Hussain, Laiq and Karimi, Mohammad and Berg, Alexander and Jain, Vishal and Borgström, Magnus T. and Gustafsson, Anders and Samuelson, Lars and Pettersson, Håkan},
  issn         = {0957-4484},
  keyword      = {defect-induced emission,GaInP LED,infrared emission,light-emitting diode,nanowire LED,radial core-shell nanowires},
  language     = {eng},
  month        = {11},
  number       = {48},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Defect-induced infrared electroluminescence from radial GaInP/AlGaInP quantum well nanowire array light- emitting diodes},
  url          = {http://dx.doi.org/10.1088/1361-6528/aa913c},
  volume       = {28},
  year         = {2017},
}