Tunable effective g factor in InAs nanowire quantum dots
(2005) In Physical Review B (Condensed Matter and Materials Physics) 72(20).- Abstract
- We report tunneling spectroscopy measurements of the Zeeman spin splitting in InAs few-electron quantum dots. The dots are formed between two InP barriers in InAs nanowires with a wurtzite crystal structure grown using chemical beam epitaxy. The values of the electron g factors of the first few electrons entering the dot are found to strongly depend on dot size. They range from close to the InAs bulk value in large dots vertical bar g(*)vertical bar=13 down to vertical bar g(*)vertical bar=2.3 for the smallest dots.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/211399
- author
- Björk, Mikael LU ; Fuhrer, Andreas LU ; Hansen, Adam LU ; Larsson, Marcus LU ; Fröberg, Linus LU and Samuelson, Lars LU
- organization
- publishing date
- 2005
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 72
- issue
- 20
- article number
- 201307
- publisher
- American Physical Society
- external identifiers
-
- wos:000233603900011
- scopus:29744439411
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.72.201307
- language
- English
- LU publication?
- yes
- id
- 42a62af3-7329-49cf-bb96-a4ac2255f0a4 (old id 211399)
- date added to LUP
- 2016-04-01 15:55:33
- date last changed
- 2022-01-28 08:06:00
@article{42a62af3-7329-49cf-bb96-a4ac2255f0a4, abstract = {{We report tunneling spectroscopy measurements of the Zeeman spin splitting in InAs few-electron quantum dots. The dots are formed between two InP barriers in InAs nanowires with a wurtzite crystal structure grown using chemical beam epitaxy. The values of the electron g factors of the first few electrons entering the dot are found to strongly depend on dot size. They range from close to the InAs bulk value in large dots vertical bar g(*)vertical bar=13 down to vertical bar g(*)vertical bar=2.3 for the smallest dots.}}, author = {{Björk, Mikael and Fuhrer, Andreas and Hansen, Adam and Larsson, Marcus and Fröberg, Linus and Samuelson, Lars}}, issn = {{1098-0121}}, language = {{eng}}, number = {{20}}, publisher = {{American Physical Society}}, series = {{Physical Review B (Condensed Matter and Materials Physics)}}, title = {{Tunable effective g factor in InAs nanowire quantum dots}}, url = {{http://dx.doi.org/10.1103/PhysRevB.72.201307}}, doi = {{10.1103/PhysRevB.72.201307}}, volume = {{72}}, year = {{2005}}, }