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Efficient high area OFETs by solution based processing of a π-electron rich donor

Miskiewicz, Pawel ; Mas-Torrent, Marta ; Jung, Jaroslaw ; Kotarba, Sylwia ; Glowacki, Ireneusz ; Gomar-Nadal, Elba ; Amabilino, David B. ; Veciana, Jaume ; Krause, Bärbel and Carbone, Dina LU , et al. (2006) In Chemistry of Materials 18(20). p.4724-4729
Abstract

We report on the preparation of high performance field-effect transistors (FETs) based on large areas of aligned films of a TTF derivative, namely, tetrakis-(octadecylthio)-tetrathiafulvalene (TTF-4SC18). TTF-4SC18 assembles into one-dimensional stacks in which the long alkyl chains promote intermolecular π-π overlapping due to their extremely closely packed nature. The films were prepared from solution by zone-casting, a simple technique that does not require the use of preoriented substrates. The films were characterized by AFM and X-ray, indicating an extremely high crystalline quality. The TTF molecules are tilted with respect to the substrate surface and are well-aligned in the casting direction. More than 40 FETs were measured,... (More)

We report on the preparation of high performance field-effect transistors (FETs) based on large areas of aligned films of a TTF derivative, namely, tetrakis-(octadecylthio)-tetrathiafulvalene (TTF-4SC18). TTF-4SC18 assembles into one-dimensional stacks in which the long alkyl chains promote intermolecular π-π overlapping due to their extremely closely packed nature. The films were prepared from solution by zone-casting, a simple technique that does not require the use of preoriented substrates. The films were characterized by AFM and X-ray, indicating an extremely high crystalline quality. The TTF molecules are tilted with respect to the substrate surface and are well-aligned in the casting direction. More than 40 FETs were measured, showing a remarkable reproducibility of their performance. The average charge carrier mobility value measured along the casting direction was about 0.006 cm2/V s for a channel length L = 100 μm and about 0.01 cm 2/V s for L = 80 μm and L = 50 μm. The FET mobilities determined in the direction perpendicular to the orientation were ca. 1 order of magnitude lower. We found that all the devices after annealing exhibited an enhanced performance with FETs mobilities about 1 order of magnitude higher. The best devices revealed a charge carrier mobility close to 0.1 cm2/V s with an on/off ratio of the order of 104.

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publishing date
type
Contribution to journal
publication status
published
in
Chemistry of Materials
volume
18
issue
20
pages
6 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:33750298238
ISSN
0897-4756
DOI
10.1021/cm060675m
language
English
LU publication?
no
id
213a6328-80c9-4f77-8258-84cb76963ea0
date added to LUP
2021-12-15 11:53:37
date last changed
2022-02-02 02:08:42
@article{213a6328-80c9-4f77-8258-84cb76963ea0,
  abstract     = {{<p>We report on the preparation of high performance field-effect transistors (FETs) based on large areas of aligned films of a TTF derivative, namely, tetrakis-(octadecylthio)-tetrathiafulvalene (TTF-4SC18). TTF-4SC18 assembles into one-dimensional stacks in which the long alkyl chains promote intermolecular π-π overlapping due to their extremely closely packed nature. The films were prepared from solution by zone-casting, a simple technique that does not require the use of preoriented substrates. The films were characterized by AFM and X-ray, indicating an extremely high crystalline quality. The TTF molecules are tilted with respect to the substrate surface and are well-aligned in the casting direction. More than 40 FETs were measured, showing a remarkable reproducibility of their performance. The average charge carrier mobility value measured along the casting direction was about 0.006 cm<sup>2</sup>/V s for a channel length L = 100 μm and about 0.01 cm <sup>2</sup>/V s for L = 80 μm and L = 50 μm. The FET mobilities determined in the direction perpendicular to the orientation were ca. 1 order of magnitude lower. We found that all the devices after annealing exhibited an enhanced performance with FETs mobilities about 1 order of magnitude higher. The best devices revealed a charge carrier mobility close to 0.1 cm<sup>2</sup>/V s with an on/off ratio of the order of 10<sup>4</sup>.</p>}},
  author       = {{Miskiewicz, Pawel and Mas-Torrent, Marta and Jung, Jaroslaw and Kotarba, Sylwia and Glowacki, Ireneusz and Gomar-Nadal, Elba and Amabilino, David B. and Veciana, Jaume and Krause, Bärbel and Carbone, Dina and Rovira, Concepció and Ulanski, Jacek}},
  issn         = {{0897-4756}},
  language     = {{eng}},
  month        = {{10}},
  number       = {{20}},
  pages        = {{4724--4729}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Chemistry of Materials}},
  title        = {{Efficient high area OFETs by solution based processing of a π-electron rich donor}},
  url          = {{http://dx.doi.org/10.1021/cm060675m}},
  doi          = {{10.1021/cm060675m}},
  volume       = {{18}},
  year         = {{2006}},
}