Efficient high area OFETs by solution based processing of a π-electron rich donor
(2006) In Chemistry of Materials 18(20). p.4724-4729- Abstract
We report on the preparation of high performance field-effect transistors (FETs) based on large areas of aligned films of a TTF derivative, namely, tetrakis-(octadecylthio)-tetrathiafulvalene (TTF-4SC18). TTF-4SC18 assembles into one-dimensional stacks in which the long alkyl chains promote intermolecular π-π overlapping due to their extremely closely packed nature. The films were prepared from solution by zone-casting, a simple technique that does not require the use of preoriented substrates. The films were characterized by AFM and X-ray, indicating an extremely high crystalline quality. The TTF molecules are tilted with respect to the substrate surface and are well-aligned in the casting direction. More than 40 FETs were measured,... (More)
We report on the preparation of high performance field-effect transistors (FETs) based on large areas of aligned films of a TTF derivative, namely, tetrakis-(octadecylthio)-tetrathiafulvalene (TTF-4SC18). TTF-4SC18 assembles into one-dimensional stacks in which the long alkyl chains promote intermolecular π-π overlapping due to their extremely closely packed nature. The films were prepared from solution by zone-casting, a simple technique that does not require the use of preoriented substrates. The films were characterized by AFM and X-ray, indicating an extremely high crystalline quality. The TTF molecules are tilted with respect to the substrate surface and are well-aligned in the casting direction. More than 40 FETs were measured, showing a remarkable reproducibility of their performance. The average charge carrier mobility value measured along the casting direction was about 0.006 cm2/V s for a channel length L = 100 μm and about 0.01 cm 2/V s for L = 80 μm and L = 50 μm. The FET mobilities determined in the direction perpendicular to the orientation were ca. 1 order of magnitude lower. We found that all the devices after annealing exhibited an enhanced performance with FETs mobilities about 1 order of magnitude higher. The best devices revealed a charge carrier mobility close to 0.1 cm2/V s with an on/off ratio of the order of 104.
(Less)
- author
- publishing date
- 2006-10-03
- type
- Contribution to journal
- publication status
- published
- in
- Chemistry of Materials
- volume
- 18
- issue
- 20
- pages
- 6 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- scopus:33750298238
- ISSN
- 0897-4756
- DOI
- 10.1021/cm060675m
- language
- English
- LU publication?
- no
- id
- 213a6328-80c9-4f77-8258-84cb76963ea0
- date added to LUP
- 2021-12-15 11:53:37
- date last changed
- 2022-02-02 02:08:42
@article{213a6328-80c9-4f77-8258-84cb76963ea0, abstract = {{<p>We report on the preparation of high performance field-effect transistors (FETs) based on large areas of aligned films of a TTF derivative, namely, tetrakis-(octadecylthio)-tetrathiafulvalene (TTF-4SC18). TTF-4SC18 assembles into one-dimensional stacks in which the long alkyl chains promote intermolecular π-π overlapping due to their extremely closely packed nature. The films were prepared from solution by zone-casting, a simple technique that does not require the use of preoriented substrates. The films were characterized by AFM and X-ray, indicating an extremely high crystalline quality. The TTF molecules are tilted with respect to the substrate surface and are well-aligned in the casting direction. More than 40 FETs were measured, showing a remarkable reproducibility of their performance. The average charge carrier mobility value measured along the casting direction was about 0.006 cm<sup>2</sup>/V s for a channel length L = 100 μm and about 0.01 cm <sup>2</sup>/V s for L = 80 μm and L = 50 μm. The FET mobilities determined in the direction perpendicular to the orientation were ca. 1 order of magnitude lower. We found that all the devices after annealing exhibited an enhanced performance with FETs mobilities about 1 order of magnitude higher. The best devices revealed a charge carrier mobility close to 0.1 cm<sup>2</sup>/V s with an on/off ratio of the order of 10<sup>4</sup>.</p>}}, author = {{Miskiewicz, Pawel and Mas-Torrent, Marta and Jung, Jaroslaw and Kotarba, Sylwia and Glowacki, Ireneusz and Gomar-Nadal, Elba and Amabilino, David B. and Veciana, Jaume and Krause, Bärbel and Carbone, Dina and Rovira, Concepció and Ulanski, Jacek}}, issn = {{0897-4756}}, language = {{eng}}, month = {{10}}, number = {{20}}, pages = {{4724--4729}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Chemistry of Materials}}, title = {{Efficient high area OFETs by solution based processing of a π-electron rich donor}}, url = {{http://dx.doi.org/10.1021/cm060675m}}, doi = {{10.1021/cm060675m}}, volume = {{18}}, year = {{2006}}, }