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Carbon Nanotube Field Effect Transistors with Suspended Graphene Gates.

Svensson, Johannes LU ; Lindahl, Niklas; Yun, Hoyeol; Seo, Miri; Midtvedt, Daniel; Tarakanov, Yury; Lindvall, Niclas; Nerushev, Oleg; Kinaret, Jari and Lee, Sangwook, et al. (2011) In Nano Letters 11. p.3569-3575
Abstract
Novel field effect transistors with suspended graphene gates are demonstrated. By incorporating mechanical motion of the gate electrode, it is possible to improve the switching characteristics compared to a static gate, as shown by a combination of experimental measurements and numerical simulations. The mechanical motion of the graphene gate is confirmed by using atomic force microscopy to directly measure the electrostatic deflection. The device geometry investigated here can also provide a sensitive measurement technique for detecting high-frequency motion of suspended membranes as required, e.g., for mass sensing.
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
11
pages
3569 - 3575
publisher
The American Chemical Society
external identifiers
  • wos:000294790200010
  • pmid:21848317
  • scopus:80052819859
ISSN
1530-6992
DOI
10.1021/nl201280q
language
English
LU publication?
yes
id
cc8ee197-057d-48af-8903-969695917939 (old id 2150993)
date added to LUP
2011-08-31 10:43:11
date last changed
2017-01-01 06:22:35
@article{cc8ee197-057d-48af-8903-969695917939,
  abstract     = {Novel field effect transistors with suspended graphene gates are demonstrated. By incorporating mechanical motion of the gate electrode, it is possible to improve the switching characteristics compared to a static gate, as shown by a combination of experimental measurements and numerical simulations. The mechanical motion of the graphene gate is confirmed by using atomic force microscopy to directly measure the electrostatic deflection. The device geometry investigated here can also provide a sensitive measurement technique for detecting high-frequency motion of suspended membranes as required, e.g., for mass sensing.},
  author       = {Svensson, Johannes and Lindahl, Niklas and Yun, Hoyeol and Seo, Miri and Midtvedt, Daniel and Tarakanov, Yury and Lindvall, Niclas and Nerushev, Oleg and Kinaret, Jari and Lee, Sangwook and Campbell, Eleanor E B},
  issn         = {1530-6992},
  language     = {eng},
  pages        = {3569--3575},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Carbon Nanotube Field Effect Transistors with Suspended Graphene Gates.},
  url          = {http://dx.doi.org/10.1021/nl201280q},
  volume       = {11},
  year         = {2011},
}