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Growth of Straight InAs-on-GaAs Nanowire Heterostructures.

Messing, Maria LU ; Wong-Leung, Jennifer; Zanolli, Zeila; Joyce, Hannah J; Tan, H Hoe; Gao, Qiang; Wallenberg, Reine LU ; Johansson, Jonas LU and Jagadish, Chennupati (2011) In Nano Letters 11(9). p.3899-3905
Abstract
One of the main motivations for the great interest in semiconductor nanowires is the possibility of easily growing advanced heterostructures that might be difficult or even impossible to achieve in thin films. For III-V semiconductor nanowires, axial heterostructures with an interchange of the group III element typically grow straight in only one interface direction. In the case of InAs-GaAs heterostructures, straight nanowire growth has been demonstrated for growth of GaAs on top of InAs, but so far never in the other direction. In this article, we demonstrate the growth of straight axial heterostructures of InAs on top of GaAs. The heterostructure interface is sharp and we observe a dependence on growth parameters closely related to... (More)
One of the main motivations for the great interest in semiconductor nanowires is the possibility of easily growing advanced heterostructures that might be difficult or even impossible to achieve in thin films. For III-V semiconductor nanowires, axial heterostructures with an interchange of the group III element typically grow straight in only one interface direction. In the case of InAs-GaAs heterostructures, straight nanowire growth has been demonstrated for growth of GaAs on top of InAs, but so far never in the other direction. In this article, we demonstrate the growth of straight axial heterostructures of InAs on top of GaAs. The heterostructure interface is sharp and we observe a dependence on growth parameters closely related to crystal structure as well as a diameter dependence on straight nanowire growth. The results are discussed by means of accurate first principles calculations of the interfacial energies. In addition, the role of the gold seed particle, the effect of its composition at different stages during growth, and its size are discussed in relation to the results observed. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
11
issue
9
pages
3899 - 3905
publisher
The American Chemical Society
external identifiers
  • wos:000294790200067
  • pmid:21786786
  • scopus:80052797409
ISSN
1530-6992
DOI
10.1021/nl202051w
language
English
LU publication?
yes
id
01522522-4fa5-4e3f-b723-30e6b73bbbce (old id 2151830)
date added to LUP
2011-08-31 08:32:32
date last changed
2017-11-12 03:39:17
@article{01522522-4fa5-4e3f-b723-30e6b73bbbce,
  abstract     = {One of the main motivations for the great interest in semiconductor nanowires is the possibility of easily growing advanced heterostructures that might be difficult or even impossible to achieve in thin films. For III-V semiconductor nanowires, axial heterostructures with an interchange of the group III element typically grow straight in only one interface direction. In the case of InAs-GaAs heterostructures, straight nanowire growth has been demonstrated for growth of GaAs on top of InAs, but so far never in the other direction. In this article, we demonstrate the growth of straight axial heterostructures of InAs on top of GaAs. The heterostructure interface is sharp and we observe a dependence on growth parameters closely related to crystal structure as well as a diameter dependence on straight nanowire growth. The results are discussed by means of accurate first principles calculations of the interfacial energies. In addition, the role of the gold seed particle, the effect of its composition at different stages during growth, and its size are discussed in relation to the results observed.},
  author       = {Messing, Maria and Wong-Leung, Jennifer and Zanolli, Zeila and Joyce, Hannah J and Tan, H Hoe and Gao, Qiang and Wallenberg, Reine and Johansson, Jonas and Jagadish, Chennupati},
  issn         = {1530-6992},
  language     = {eng},
  number       = {9},
  pages        = {3899--3905},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Growth of Straight InAs-on-GaAs Nanowire Heterostructures.},
  url          = {http://dx.doi.org/10.1021/nl202051w},
  volume       = {11},
  year         = {2011},
}