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Hydrogen intercalation of graphene grown on 6H-SiC(0001)

Watcharinyanon, S.; Virojanadara, C.; Osiecki, J. R.; Zakharov, Alexei LU ; Yakimova, R.; Uhrberg, R. I. G. and Johansson, L. I. (2011) In Surface Science 605(17-18). p.1662-1668
Abstract
Atomic hydrogen exposures on a monolayer graphene grown on the SiC(0001) surface are shown to result in hydrogen intercalation. The hydrogen intercalation induces a transformation of the monolayer graphene and the carbon buffer layer to bi-layer graphene without a buffer layer. The STM, LEED, and core-level photoelectron spectroscopy measurements reveal that hydrogen atoms can go underneath the graphene and the carbon buffer layer and bond to Si atoms at the substrate interface. This transforms the buffer layer into a second graphene layer. Hydrogen exposure results initially in the formation of bi-layer graphene islands on the surface. With larger atomic hydrogen exposures, the islands grow in size and merge until the surface is fully... (More)
Atomic hydrogen exposures on a monolayer graphene grown on the SiC(0001) surface are shown to result in hydrogen intercalation. The hydrogen intercalation induces a transformation of the monolayer graphene and the carbon buffer layer to bi-layer graphene without a buffer layer. The STM, LEED, and core-level photoelectron spectroscopy measurements reveal that hydrogen atoms can go underneath the graphene and the carbon buffer layer and bond to Si atoms at the substrate interface. This transforms the buffer layer into a second graphene layer. Hydrogen exposure results initially in the formation of bi-layer graphene islands on the surface. With larger atomic hydrogen exposures, the islands grow in size and merge until the surface is fully covered with bi-layer graphene. A (root 3 x root 3)R30 degrees periodicity is observed on the bi-layer areas. ARPES and energy filtered XPEEM investigations of the electron band structure confirm that after hydrogenation the single pi-band characteristic of monolayer graphene is replaced by two pi-bands that represent bi-layer graphene. Annealing an intercalated sample, representing bi-layer graphene, to a temperature of 850 degrees C. or higher, re-establishes the monolayer graphene with a buffer layer on SiC(0001). (C) 2011 Elsevier B.V. All rights reserved. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Epitaxial graphene, Hydrogen intercalation, Bi-layer, Buffer layer, free, STM, Core-level photoelectron spectroscopy, ARPES, Energy, filtered XPEEM
in
Surface Science
volume
605
issue
17-18
pages
1662 - 1668
publisher
Elsevier
external identifiers
  • wos:000293937500011
  • scopus:79960709294
ISSN
0039-6028
DOI
10.1016/j.susc.2010.12.018
language
English
LU publication?
yes
id
feed51ed-261f-4883-9a82-012bb6ff421c (old id 2161611)
date added to LUP
2011-09-21 12:26:42
date last changed
2017-10-08 04:05:04
@article{feed51ed-261f-4883-9a82-012bb6ff421c,
  abstract     = {Atomic hydrogen exposures on a monolayer graphene grown on the SiC(0001) surface are shown to result in hydrogen intercalation. The hydrogen intercalation induces a transformation of the monolayer graphene and the carbon buffer layer to bi-layer graphene without a buffer layer. The STM, LEED, and core-level photoelectron spectroscopy measurements reveal that hydrogen atoms can go underneath the graphene and the carbon buffer layer and bond to Si atoms at the substrate interface. This transforms the buffer layer into a second graphene layer. Hydrogen exposure results initially in the formation of bi-layer graphene islands on the surface. With larger atomic hydrogen exposures, the islands grow in size and merge until the surface is fully covered with bi-layer graphene. A (root 3 x root 3)R30 degrees periodicity is observed on the bi-layer areas. ARPES and energy filtered XPEEM investigations of the electron band structure confirm that after hydrogenation the single pi-band characteristic of monolayer graphene is replaced by two pi-bands that represent bi-layer graphene. Annealing an intercalated sample, representing bi-layer graphene, to a temperature of 850 degrees C. or higher, re-establishes the monolayer graphene with a buffer layer on SiC(0001). (C) 2011 Elsevier B.V. All rights reserved.},
  author       = {Watcharinyanon, S. and Virojanadara, C. and Osiecki, J. R. and Zakharov, Alexei and Yakimova, R. and Uhrberg, R. I. G. and Johansson, L. I.},
  issn         = {0039-6028},
  keyword      = {Epitaxial graphene,Hydrogen intercalation,Bi-layer,Buffer layer,free,STM,Core-level photoelectron spectroscopy,ARPES,Energy,filtered XPEEM},
  language     = {eng},
  number       = {17-18},
  pages        = {1662--1668},
  publisher    = {Elsevier},
  series       = {Surface Science},
  title        = {Hydrogen intercalation of graphene grown on 6H-SiC(0001)},
  url          = {http://dx.doi.org/10.1016/j.susc.2010.12.018},
  volume       = {605},
  year         = {2011},
}