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Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

Monemar, Bo LU ; Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder; Lindgren, David LU ; Samuelson, Lars LU ; Ni, Xianfeng; Morkoc, Hadis and Paskova, Tanya, et al. (2011) In Physica Status Solidi. A: Applications and Materials Science 208(7). p.1532-1534
Abstract
Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10(18) cm(-3) to above 10(20) cm(-3). The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9-3.3eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependece of the BE spectra on excitation intensity as well as the transient decay behaviour demonstrate acoustic phonon assisted transfer between the acceptor BE states. The lower energy donor-acceptor pair spectra suggest the presence of deep acceptors, in addition to... (More)
Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10(18) cm(-3) to above 10(20) cm(-3). The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9-3.3eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependece of the BE spectra on excitation intensity as well as the transient decay behaviour demonstrate acoustic phonon assisted transfer between the acceptor BE states. The lower energy donor-acceptor pair spectra suggest the presence of deep acceptors, in addition to the two main shallower ones at about 0.23eV Similar spectra from Mg-doped GaN nanowires (NWs) grown by MOCVD are also briefly disussed. (C) 2011 WILEY-VCH Verlag Gmbh & Co. KGaA, Weinheim (Less)
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publication status
published
subject
keywords
GaN, Mg-doping, MOCVD, m-plane, nanowire, photoluminescence
in
Physica Status Solidi. A: Applications and Materials Science
volume
208
issue
7
pages
1532 - 1534
publisher
Wiley-Blackwell
external identifiers
  • wos:000293803600013
  • scopus:79960102293
ISSN
1862-6300
DOI
10.1002/pssa.201001036
language
English
LU publication?
yes
id
ca4b5587-4dbe-418f-95ef-7bae9e4a4060 (old id 2162772)
date added to LUP
2011-09-20 12:23:27
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2017-01-01 03:34:37
@article{ca4b5587-4dbe-418f-95ef-7bae9e4a4060,
  abstract     = {Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10(18) cm(-3) to above 10(20) cm(-3). The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9-3.3eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependece of the BE spectra on excitation intensity as well as the transient decay behaviour demonstrate acoustic phonon assisted transfer between the acceptor BE states. The lower energy donor-acceptor pair spectra suggest the presence of deep acceptors, in addition to the two main shallower ones at about 0.23eV Similar spectra from Mg-doped GaN nanowires (NWs) grown by MOCVD are also briefly disussed. (C) 2011 WILEY-VCH Verlag Gmbh & Co. KGaA, Weinheim},
  author       = {Monemar, Bo and Paskov, Plamen and Pozina, Galia and Hemmingsson, Carl and Bergman, Peder and Lindgren, David and Samuelson, Lars and Ni, Xianfeng and Morkoc, Hadis and Paskova, Tanya and Bi, Zhaoxia and Ohlsson, Jonas},
  issn         = {1862-6300},
  keyword      = {GaN,Mg-doping,MOCVD,m-plane,nanowire,photoluminescence},
  language     = {eng},
  number       = {7},
  pages        = {1532--1534},
  publisher    = {Wiley-Blackwell},
  series       = {Physica Status Solidi. A: Applications and Materials Science},
  title        = {Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates},
  url          = {http://dx.doi.org/10.1002/pssa.201001036},
  volume       = {208},
  year         = {2011},
}